NVTFS5824NLWFTWG Allicdata Electronics
Allicdata Part #:

NVTFS5824NLWFTWG-ND

Manufacturer Part#:

NVTFS5824NLWFTWG

Price: $ 0.32
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 20A U8FL
More Detail: N-Channel 60V 3.2W (Ta), 57W (Tc) Surface Mount 8...
DataSheet: NVTFS5824NLWFTWG datasheetNVTFS5824NLWFTWG Datasheet/PDF
Quantity: 1000
5000 +: $ 0.28908
Stock 1000Can Ship Immediately
$ 0.32
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-WDFN (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.2W (Ta), 57W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 20.5 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: --
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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The NVTFS5824NLWFTWG is a N-channel MOSFET that is used in many different applications and is the most commonly used type of MOSFET. It is used in a wide variety of applications such as power supplies, motor control, and high speed switching. This article will discuss the application field and working principle of the NVTFS5824NLWFTWG.

The NVTFS5824NLWFTWG is a type of transistor, specifically a MOSFET, or metal-oxide-semiconductor field-effect transistor. It is a type of transistor that is well suited for power applications, such as for driving loads and amplifying signals. The key characteristic of MOSFETs that makes them so versatile is the voltage-controlled gate, which makes them ideal for control applications.

The NVTFS5824NLWFTWG is a N-channel MOSFET, meaning that it has an N-type channel between the source and drain regions. This type of MOSFET is also referred to as an enhancement-mode MOSFET because it needs a gate voltage of 0.8V to be fully on. This makes it easier to control and provide more power. It is also a low-power MOSFET, meaning that it does not consume a lot of power when in operation.

The NVTFS5824NLWFTWG has a number of different uses and applications. It is commonly used in power application such as switching loads, driving motors, and amplifying signals. It can also be used in circuit design, such as in analog circuits where the voltage-controlled gate can be used to provide accurate control of the signals. It can also be used in digital circuits, where the low threshold voltage can provide more flexibility. Additionally, it can also be used in high speed switching applications, where its low power consumption makes it suitable for high frequency switching operations.

The NVTFS5824NLWFTWG works by allowing an electric current to flow between the source and the gate when the gate voltage is increased. This electric current causes a field effect between the source and the drain, which increases the resistance between the two regions. This resistance can be used to control the flow of current through the device. The amount of current that flows is proportional to the gate voltage, so increasing the gate voltage increases the current flow. Conversely, decreasing the gate voltage will decrease the amount of current.

The NVTFS5824NLWFTWG is a very versatile MOSFET due to its low-power operation and voltage-controlled gate. It can be used for a wide variety of applications, such as power supplies, motor control, circuit design, and high speed switching. It is also a great choice for low power applications due to its low threshold voltage and low on-state output resistance. These features make the NVTFS5824NLWFTWG a great choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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