NVTFS5116PLWFTWG Allicdata Electronics
Allicdata Part #:

NVTFS5116PLWFTWG-ND

Manufacturer Part#:

NVTFS5116PLWFTWG

Price: $ 0.35
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 60V 14A U8FL
More Detail: P-Channel 60V 6A (Ta) 3.2W (Ta), 21W (Tc) Surface ...
DataSheet: NVTFS5116PLWFTWG datasheetNVTFS5116PLWFTWG Datasheet/PDF
Quantity: 1000
5000 +: $ 0.31538
Stock 1000Can Ship Immediately
$ 0.35
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-WDFN (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.2W (Ta), 21W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1258pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 52 mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The NVTFS5116PLWFTWG is a type of Field Effect Transistor (FET). It is a type of single MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and is used in many applications. In this article, we\'ll discuss the NVTFS5116PLWFTWG, its application field and the working principle behind it.

FETs are transistors that use an electric field to control the flow of current between its source and drain. In FETs, the current flow between these two terminals is controlled by a gate that is insulated from the main current channel (the channel between the source and drain). This gate allows you to control the current in the channel without having to vary the voltage or amperage in the channel.

The NVTFS5116PLWFTWG is a single MOSFET, meaning it has only one gate that controls the current flow between the source and the drain. The device features an integrated body diode to reduce switching losses, a low on-resistance to reduce power dissipation, and a maximum voltage rating of 35V.

The NVTFS5116PLWFTWG is suitable for a variety of applications, such as power supplies, DC/DC converters, inverters and motor control. It is also used in high voltage applications, such as photovoltaic (solar) cells and power inverters. In these applications, the device helps to limit current flow and protect components from damage.

The working principle behind the NVTFS5116PLWFTWG is the application of a voltage to the gate terminal. This voltage can either be positive (analogous to the supply voltage) or negative (analogous to the ground or negative supply voltage). When a positive voltage is applied to the gate, the transistor is turned on, allowing current to flow from the source to the drain. Conversely, when a negative voltage is applied to the gate, the transistor is turned off and the current is blocked.

The device also features unique characteristics that make it suited to certain applications. For example, it has low input capacitance, which makes it suitable for high-speed switching applications, such as those in motor control. Furthermore, its moderate thermal dissipation makes it suitable for high power applications.

The NVTFS5116PLWFTWG can be used in various applications due to its many characteristics. It is suitable for both low and high voltage applications, and its low capacitance and moderate thermal dissipation make it ideal for high power and high-speed switching applications. Additionally, the device’s integrated body diode reduces switching losses.

Overall, the NVTFS5116PLWFTWG is a type of single MOSFET and is suitable for a variety of applications. Its low input capacitance and moderate thermal dissipation make it suitable for high power and high-speed switching applications, while its integrated body diode reduces switching losses. Finally, its working principle involves the application of either a positive or negative voltage to the gate terminal to either turn the transistor on or off.

The specific data is subject to PDF, and the above content is for reference

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