Vgs(th) (Max) @ Id:	1V @ 250µA
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3 (TO-236)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	960mW (Ta), 1.7W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	561pF @ 10V
Vgs (Max):	±8V
Gate Charge (Qg) (Max) @ Vgs:	23nC @ 8V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	66 mOhm @ 2.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	3.8A (Tc)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

SI2367DS-T1-GE3 Application Field and Working Principle

Introduction to SI2367DS-T1-GE3

SI2367DS-T1-GE3 is a dual N-channel MOSFET which offer superior characteristics in terms of performance and power savings. It has high transconductance and low ON resistance. This MOSFET also feature fast switching speed, durability, axial and radial mounting options, and secure on-board mounting. It has a variety of uses, and is often used in switching circuits, DC-DC converters, and in digital signal processors.

Application Field

SI2367DS-T1-GE3 is mainly used in general purpose power MOSFET applications such as DC to DC converters, load switches, motor controls, as well as in applications such as industrial controllers, signal processing modem, medical equipment, and power supply circuits. Because it is a power MOSFET, it is capable of operating in high voltages and has a temperature threshold of -55°C to 180°C.

Function Principle

SI2367DS-T1-GE3 is an N-channel enhancement mode MOSFET. This type of MOSFET has three terminals, the gate, the drain, and the source. The gate terminal is used to control the flow of electrons from the causing a depletion of the electron density near it, and therefore blocking the drain-to-source current. When a potential is applied to the gate terminal, it will cause the depletion zone to disappear, allowing for a current to flow. A major distinguishing feature of N-channel MOSFETs is their high input impedance. This is because the majority of the current is supplied by the semiconductor material 6H-SiC, which has a very high electron mobility. This means that the device is capable of switching between a low and high state very quickly.In order to ensure that the device operates correctly, the gate source voltage must be maintained to maintain the device’s threshold voltage. This has to be done by providing a stable DC gate bias voltage. Furthermore, a decoupling capacitor must also be used to ensure that the stability of the device is maintained. This capacitor stores the energy present in the gate source voltage, which helps to reduce any wobbles.

Conclusion

SI2367DS-T1-GE3 is a dual N-channel MOSFET with a wide range of application fields, from switching circuits and DC-DC converters to industrial controllers and power supply circuits. In order to ensure that it functions correctly, a decoupling capacitor must be used to maintain the stability of the device. Its high input impedance also makes it ideal for fast switching and low power consumption applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description