SI2302DDS-T1-GE3

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The SI2302DDS-T1-GE3 is a Dual Differential N-Channel Enhancement Mode MOSFET, which uses a state-of-the-art trench technology to achieve the industry’s highest level of performance. It is designed to improve power efficiency and reduce EMI. It is designed to switch low voltage, low power load with low off-state leakage current.

The SI2302DDS-T1-GE3 applies to Switching Regulators, Load Switches, Motor controls, DC/DC converters and Battery charging applications. It is ideal for solutions requiring low on-state resistance, low input threshold and faster turn-on time. SI2302DDS-T1-GE3 also offers compatibility with low voltage CMOS and TTL circuits, making it the perfect choice for power management applications.

The working principle of the SI2302DDS-T1-GE3 is based on a double-diffused MOSFET structure, which consists of two epitaxial source regions, an insulated gate field-effect transistor, and two drain regions. By applying a positive gate voltage, electrons from the source regions will be attracted by the gate and generate inversion channels between the source and drain regions. This inversion channel is controlled by gate voltage, which causes a decrease in gate-source voltage and consequently, drain current.

SI2302DDS-T1-GE3 is equipped with enhanced body-drain voltage withstand capability, which facilitates high voltage applications. It has a low R_DS(ON) (on-state resistance) with fast turn-on time, making the device very efficient in power supply. It also has a high payload, low static power consumption and low thermal resistance which enables it to handle a wide range of applications, including power management and power switching.

The device provides higher operating speeds and improved efficiency, which helps to reduce system cost. SI2302DDS-T1-GE3 also features a low capacitance body-drain diode which reduces ringing and increased noise immunity at probe points. It has a wide body voltage range of 12V to 20V, which makes it suitable for a range of high voltage applications.

In summary, the SI2302DDS-T1-GE3 is a state-of-the-art dual differential N-channel enhancement mode MOSFET that provides an enhanced level of performance for power management applications. It offers low static power consumption, low thermal resistance and improved operating speeds. The device is suited for a range of applications, including power management, power switching and high voltage applications. It offers superior performance, improved efficiency and reduced system cost.

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