SI2392ADS-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI2392ADS-T1-GE3TR-ND

Manufacturer Part#:

SI2392ADS-T1-GE3

Price: $ 1.98
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 100V 3.1A SOT-23
More Detail: N-Channel 100V 3.1A (Tc) 1.25W (Ta), 2.5W (Tc) Sur...
DataSheet: SI2392ADS-T1-GE3 datasheetSI2392ADS-T1-GE3 Datasheet/PDF
Quantity: 42000
1 +: $ 1.98000
10 +: $ 1.92060
100 +: $ 1.88100
1000 +: $ 1.84140
10000 +: $ 1.78200
Stock 42000Can Ship Immediately
$ 1.98
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 196pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 126 mOhm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SI2392ADS-T1-GE3 is a single high voltage FET (field-effect transistor) used in special applications such as motor control, solar inverters, lighting and power supplies. It has a low gate threshold voltage and excellent on-state conduction performance, making it ideal for use in power converters and motor control.

The SI2392ADS-T1-GE3 FET is a N- channel MOSFET (metal-oxide-semiconductor-field-effect-transistor). It has a max Vdss (drain-source voltage) of 30 volts and a max Id of 83A. It also has a low gate threshold voltage of -1.9V. The maximum power dissipation is 786mW and the maximum Ids is 83A. The typical on-resistance is 2.9mO.

The FET works by controlling the flow of electrons through the channel which is created between the source and the drain. This is achieved by applying a voltage across the gate-source terminals. The size of the channel is determined by the magnitude of the voltage applied. By controlling the gate voltage, the current through the MOSFET can be adjusted.

The FET has two main operations - enhancement mode and depletion mode. In enhancement mode, the current flow is increased by increasing the gate voltage, while in depletion mode, the current flow is decreased by decreasing the gate voltage. In order to operate in either enhancement or depletion mode, the FET must be correctly biased. This means that the correct voltages must be applied across the gate-source and drain-source.

The SI2392ADS-T1-GE3 is a single gate FET with an integrated high voltage gate protection device. This device prevents excess gate voltages from damaging the FET, making it suitable for high voltage applications. The device has a low on-state drain-source resistance, making it well-suited for power applications.

The SI2392ADS-T1-GE3 is a high voltage MOSFET with excellent on-state conduction performance, making it perfect for use in a wide range of applications including motor control, solar inverters, lighting and power supplies. It has a low gate threshold voltage and a max Vdss of 30 volts and a max Id of 83A. It also has a high power dissipation rating, making it suitable for use in high power applications.

The specific data is subject to PDF, and the above content is for reference

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