SI2303CDS-T1-E3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI2303CDS-T1-E3 is a general purpose enhancement type N-channel MOSFET. It is often used in high-performance analog and switch mode power supply circuits, as well as in advanced motor control, battery management, and solar panel applications, among others. Its enhanced thermal characteristics enable it to efficiently transfer heat away from the environment, making it suitable for power applications.

The SI2303CDS-T1-E3 has three terminals - drain, source, and gate. The source is connected to ground, and the drain is the output of the device. The gate, which is connected to the control voltage source, controls the current flowing between the source and drain, depending on the voltage across the gate. When the voltage between the gate and source is increased above a certain threshold, the drain current increases exponentially.

When the gate voltage is decreased, the device enters cut-off mode and the drain current is reduced to a minimum. The device also has an intrinsic body diode that protects it from short-circuits and direct current flow. It is possible to regulate the source and drain voltages, as well as the gate voltage, to obtain the desired drain current and transfer characteristics.

The unique feature of the SI2303CDS-T1-E3 is that it can be used in both analog and digital circuits. In analog applications, it is used for voltage and current control, as well as for signal amplification. In digital circuits, it is used for switching and digital signal processing.

Applications of the SI2303CDS-T1-E3 include power switching, motor control, battery management, DC-DC converters, solar power inverters, and audio amplifiers. It is also used in medical equipment, consumer electronics, automotive electronics, aerospace and defense systems, and industrial automation.

The SI2303CDS-T1-E3 has the capability to withstand demanding operating conditions, thanks to its excellent thermal properties. The device can handle a high drain-source voltage and drain current, up to 250V and 12A, respectively. Furthermore, it has a low gate-source threshold voltage of 2.5V and a gate-source capacitance of 0.05nF.

The SI2303CDS-T1-E3 is part of a family of general purpose MOSFETs with low on-resistance. Its excellent linear characteristics, together with its high power efficiency, make the device particularly suitable for high-frequency switching and motor control applications. It is also suitable for use in battery management, DC-DC converters, and solar inverters.

The specific data is subject to PDF, and the above content is for reference