SI2337DS-T1-E3 Allicdata Electronics
Allicdata Part #:

SI2337DS-T1-E3TR-ND

Manufacturer Part#:

SI2337DS-T1-E3

Price: $ 0.38
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 80V 2.2A SOT23-3
More Detail: P-Channel 80V 2.2A (Tc) 760mW (Ta), 2.5W (Tc) Surf...
DataSheet: SI2337DS-T1-E3 datasheetSI2337DS-T1-E3 Datasheet/PDF
Quantity: 1000
1 +: $ 0.37917
10 +: $ 0.32861
100 +: $ 0.26542
1000 +: $ 0.25278
10000 +: $ 0.24014
Stock 1000Can Ship Immediately
$ 0.38
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 760mW (Ta), 2.5W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 270 mOhm @ 1.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SI2337DS-T1-E3 is a single-source Field-Effect Transistor (FET) component that features low On-state resistance and high current handling capability. It is designed for extended-temperature range and is suitable for use in consumer and automotive applications. This component is a low-frequency switching system component and can be used in many different environments. It is also well suited for applications that require high power levels and low-voltage operation.

In general, FETs are used as switching components in power electronics and high frequency application areas. They are also used in motor control, power amplification, telecommunication, and as AC/DC adaptor switches. The SI2337DS-T1-E3 is a high-performance component and provides extremely low On-state resistance and high switching speeds. It has a low gate charge of 2.3nC and an On-state resistance of 18µΩ. Additionally, it has a low operating temperature range of −40°C to 150°C and an operating voltage range of 8 to 27V.

The working principle of the SI2337DS-T1-E3 is based on a junction field-effect transistor. The FET structure consists of a semiconductor gate electrode and a pair of source and drain regions. When the gate electrode is charged, a voltage is applied across the gate electrode, which changes the voltage across the source-drain junction. When the gate voltage is increased, the source-drain region is turned on, allowing current to flow from source to drain. When the gate voltage is decreased, the source-drain region is turned off, blocking current flow. This mechanism is used for switching applications, where power is turned on or off.

The SI2337DS-T1-E3 has a wide range of applications due to its high performance and low On-state resistance. Its switching capability and low-voltage operation make it ideal for a variety of AC/DC adaptor, power amplifier, and motor control applications. It is also suited for high-frequency switching applications, such as in communication systems, where it can be used as a signal switch. It can be used in automotive applications, such as power window controls, as well as in consumer applications such as air conditioners and home entertainment systems.

In conclusion, the SI2337DS-T1-E3 is a single-source Field-Effect Transistor component that offers excellent performance and low On-state resistance. It is suitable for high-power and low-voltage applications and is well suited for use in power electronics, telecommunication, motor control, and other AC/DC adaptor switching systems. Its wide operating temperature range makes it suitable for use in various environments. Its low gate charge and On-state resistance make it an excellent choice for applications that require fast switching and high efficiency.

The specific data is subject to PDF, and the above content is for reference

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