SI2308CDS-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI2308CDS-T1-GE3TR-ND

Manufacturer Part#:

SI2308CDS-T1-GE3

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 60V 2.6A SOT23-3
More Detail: N-Channel 60V 2.6A (Tc) 1.6W (Tc) Surface Mount SO...
DataSheet: SI2308CDS-T1-GE3 datasheetSI2308CDS-T1-GE3 Datasheet/PDF
Quantity: 3000
1 +: $ 0.08000
10 +: $ 0.07760
100 +: $ 0.07600
1000 +: $ 0.07440
10000 +: $ 0.07200
Stock 3000Can Ship Immediately
$ 0.08
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.6W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 105pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 10V
Series: TrenchFET® Gen IV
Rds On (Max) @ Id, Vgs: 144 mOhm @ 1.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI2308CDS-T1-GE3 is a transistor that is part of a family of silicon-based metal–oxide–semiconductor field-effect transistors (MOSFET). It is a single enhancement type MOSFET transistor, with a drain-source breakdown voltage of 30V and a maximum drain current of 5A. These transistors are commonly used in low-voltage applications, such as gate drives, discrete voltage regulators, and switching converters. In order to understand their value, it is important to understand the application fields and working principle of the SI2308CDS-T1-GE3.

One of the main advantages of the SI2308CDS-T1-GE3 is its ability to control larger current flows using small input voltages. This type of transistor has been used for switching, power regulation, and for controlling large currents in low-voltage applications. It is especially useful for driving motors, where speed needs to be precisely regulated in an efficient way. It is also often used in power supplies, where its low leakage current makes it ideal for efficient use of power.

The SI2308CDS-T1-GE3 relies on the use of a gate voltage to control the flow of current from its source to its drain. When a positive voltage is applied to the gate, the transistor will become “on”, allowing current to flow between its source and drain. Conversely, when a negative voltage is applied to the gate, the transistor will become “off”, preventing current from flowing between the source and drain. By adjusting the gate voltage, the amount of current that flows between the source and drain can be controlled.

The SI2308CDS-T1-GE3 also has a number of other important characteristics that make it an attractive option for a variety of applications. One key characteristic is its high current-handling capability, which allows it to safely control larger currents without overheating. It also has a low on-resistance, which makes it suitable for low-impedance power supplies and motor control applications. Finally, its low gate triggering voltage makes it feasible to operate it with lower voltages, allowing for more efficient power supply design.

The SI2308CDS-T1-GE3 is a valuable device for a variety of applications. Its ability to control current using small input voltages makes it suitable for low-voltage applications, such as gate drives, discrete voltage regulators, and switching converters. Its high current-handling capability, low on-resistance, and low gate triggering voltage also make it suitable for power supplies and motor control applications. With its distinct characteristics, the SI2308CDS-T1-GE3 can be an excellent choice for many applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "SI23" Included word is 40
Part Number Manufacturer Price Quantity Description
SI2329DS-T1-GE3 Vishay Silic... -- 15000 MOSFET P-CH 8V 6A SOT-23P...
SI2314EDS-T1-E3 Vishay Silic... -- 39000 MOSFET N-CH 20V 3.77A SOT...
SI2303-TP Micro Commer... 0.06 $ 1000 P-CHANNEL MOSFET, SOT-23 ...
SI2307BDS-T1-GE3 Vishay Silic... 0.18 $ 1000 MOSFET P-CH 30V 2.5A SOT2...
SI2312BDS-T1-E3 Vishay Silic... -- 39000 MOSFET N-CH 20V 3.9A SOT2...
SI2302CDS-T1-GE3 Vishay Silic... -- 48000 MOSFET N-CH 20V 2.6A SOT2...
SI2307BDS-T1-E3 Vishay Silic... -- 9000 MOSFET P-CH 30V 2.5A SOT2...
SI2308CDS-T1-GE3 Vishay Silic... -- 3000 MOSFET N-CH 60V 2.6A SOT2...
SI2319DS-T1-GE3 Vishay Silic... 0.22 $ 1000 MOSFET P-CH 40V 2.3A SOT2...
SI2333DS-T1-E3 Vishay Silic... -- 183000 MOSFET P-CH 12V 4.1A SOT2...
SI2302DDS-T1-GE3 Vishay Silic... -- 18000 MOSFET N-CHAN 20V SOT23N-...
SI2323DS-T1 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 20V 3.7A SOT2...
SI2333DS-T1-GE3 Vishay Silic... -- 6000 MOSFET P-CH 12V 4.1A SOT2...
SI2308BDS-T1-GE3 Vishay Silic... -- 186000 MOSFET N-CH 60V 2.3A SOT2...
SI2312-TP Micro Commer... 0.06 $ 1000 N-CHANNEL MOSFET, SOT-23 ...
SI2392DS-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 100V 3.1A SOT...
SI2303BDS-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 30V 1.49A SOT...
SI2333-TP Micro Commer... 0.06 $ 1000 P-CHANNEL MOSFET, SOT-23 ...
SI2303CDS-T1-E3 Vishay Silic... 0.14 $ 1000 MOSFET P-CH 30V 2.7A SOT2...
SI2303BDS-T1 Vishay Silic... -- 1000 MOSFET P-CH 30V 1.49A SOT...
SI2351DS-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 20V 2.8A SOT2...
SI2367DS-T1-GE3 Vishay Silic... -- 9000 MOSFET P-CH 20V 3.8A SOT-...
SI2343DS-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 30V 3.1A SOT-...
SI2316DS-T1-GE3 Vishay Silic... 0.21 $ 1000 MOSFET N-CH 30V 2.9A SOT2...
SI2309CDS-T1-E3 Vishay Silic... -- 1000 MOSFET P-CH 60V 1.6A SOT2...
SI2325DS-T1-GE3 Vishay Silic... -- 42000 MOSFET P-CH 150V 0.53A SO...
SI2333CDS-T1-E3 Vishay Silic... -- 12192 MOSFET P-CH 12V 7.1A SOT2...
SI2341DS-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 30V 2.5A SOT-...
SI2306-TP Micro Commer... 0.06 $ 1000 N-CHANNEL MOSFET, SOT-23 ...
SI2392ADS-T1-GE3 Vishay Silic... -- 42000 MOSFET N-CH 100V 3.1A SOT...
SI2304DS,215 Nexperia USA... 0.0 $ 1000 MOSFET N-CH 30V 1.7A SOT2...
SI2303BDS-T1-E3 Vishay Silic... -- 1000 MOSFET P-CH 30V 1.49A SOT...
SI2372DS-T1-GE3 Vishay Silic... 0.08 $ 90000 MOSFET N-CHAN 30V SOT23N-...
SI2337DS-T1-E3 Vishay Silic... -- 1000 MOSFET P-CH 80V 2.2A SOT2...
SI2343DS-T1-E3 Vishay Silic... -- 1000 MOSFET P-CH 30V 3.1A SOT2...
SI2327DS-T1-E3 Vishay Silic... -- 1000 MOSFET P-CH 200V 0.38A SO...
SI2321DS-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 20V 2.9A SOT-...
SI2308DS-T1-E3 Vishay Silic... -- 1000 MOSFET N-CH 60V 2A SOT23-...
SI2305ADS-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 8V 5.4A SOT23...
SI2321DS-T1-E3 Vishay Silic... -- 1000 MOSFET P-CH 20V 2.9A SOT-...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics