
Allicdata Part #: | SI2308CDS-T1-GE3TR-ND |
Manufacturer Part#: |
SI2308CDS-T1-GE3 |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 60V 2.6A SOT23-3 |
More Detail: | N-Channel 60V 2.6A (Tc) 1.6W (Tc) Surface Mount SO... |
DataSheet: | ![]() |
Quantity: | 3000 |
1 +: | $ 0.08000 |
10 +: | $ 0.07760 |
100 +: | $ 0.07600 |
1000 +: | $ 0.07440 |
10000 +: | $ 0.07200 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.6W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 105pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 4nC @ 10V |
Series: | TrenchFET® Gen IV |
Rds On (Max) @ Id, Vgs: | 144 mOhm @ 1.9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.6A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI2308CDS-T1-GE3 is a transistor that is part of a family of silicon-based metal–oxide–semiconductor field-effect transistors (MOSFET). It is a single enhancement type MOSFET transistor, with a drain-source breakdown voltage of 30V and a maximum drain current of 5A. These transistors are commonly used in low-voltage applications, such as gate drives, discrete voltage regulators, and switching converters. In order to understand their value, it is important to understand the application fields and working principle of the SI2308CDS-T1-GE3.
One of the main advantages of the SI2308CDS-T1-GE3 is its ability to control larger current flows using small input voltages. This type of transistor has been used for switching, power regulation, and for controlling large currents in low-voltage applications. It is especially useful for driving motors, where speed needs to be precisely regulated in an efficient way. It is also often used in power supplies, where its low leakage current makes it ideal for efficient use of power.
The SI2308CDS-T1-GE3 relies on the use of a gate voltage to control the flow of current from its source to its drain. When a positive voltage is applied to the gate, the transistor will become “on”, allowing current to flow between its source and drain. Conversely, when a negative voltage is applied to the gate, the transistor will become “off”, preventing current from flowing between the source and drain. By adjusting the gate voltage, the amount of current that flows between the source and drain can be controlled.
The SI2308CDS-T1-GE3 also has a number of other important characteristics that make it an attractive option for a variety of applications. One key characteristic is its high current-handling capability, which allows it to safely control larger currents without overheating. It also has a low on-resistance, which makes it suitable for low-impedance power supplies and motor control applications. Finally, its low gate triggering voltage makes it feasible to operate it with lower voltages, allowing for more efficient power supply design.
The SI2308CDS-T1-GE3 is a valuable device for a variety of applications. Its ability to control current using small input voltages makes it suitable for low-voltage applications, such as gate drives, discrete voltage regulators, and switching converters. Its high current-handling capability, low on-resistance, and low gate triggering voltage also make it suitable for power supplies and motor control applications. With its distinct characteristics, the SI2308CDS-T1-GE3 can be an excellent choice for many applications.
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