
Allicdata Part #: | SI2303-TPMSTR-ND |
Manufacturer Part#: |
SI2303-TP |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Micro Commercial Co |
Short Description: | P-CHANNEL MOSFET, SOT-23 PACKAGE |
More Detail: | P-Channel 30V 3A (Ta) 250mW (Ta) Surface Mount SOT... |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 0.05506 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 250mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 226pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 180 mOhm @ 2A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI2303-TP is a high-performance small-signal n-channel enhancement mode MOSFET transistor manufactured by Vishay Siliconix. It is designed to provide high power, low-voltage switching functionality and can be used in numerous automotive, consumer and industrial applications. It is capable of operating at both low and high power levels.
The SI2303-TP has an N-channel structure and is fabricated using a combination of advanced power MOSFET processes and techniques. It features an on-resistance of only 0.026Ω, very low gate charge, and a low Miller plateau voltage. The high-speed switching capability makes it ideal for high-speed switching applications. The low threshold voltage, along with its high-speed switching capability, make the SI2303-TP an ideal choice for low-voltage, low-on-resistance mechanisms.
The SI2303-TP is optimized for use in high-power consumer, automotive and industrial applications, specifically those requiring high-speed switching. It is capable of operating at either low (VDS= 0.6V to 15V) or high (VDS= 20V to 30V) power levels, allowing it to be used in a variety of switching applications. The maximum drain-source breakdown voltage is 30V, making it well-suited to applications requiring high power or voltage capabilities.
The working principle of the SI2303-TP is relatively straightforward. It is a field-effect transistor (FET) that is made up of three terminal connections - the gate, the drain, and the source - that enable its basic operation. The gate is the control terminal, which can accept an input signal, such as an electrical voltage, to regulate the voltage and current flow through the channel. The drain is the output terminal, which can provide its output voltage and current as determined by the control signal at the gate. The source also serves as an output terminal and provides the same voltage and current as the drain when the switch is turned on.
When the voltage applied to the gate is greater than the threshold voltage, the FET becomes conducting and current can flow through the channel. This is known as the "on" state. When the voltage applied to the gate is lower than the threshold voltage, the FET becomes blocking and no current can flow through the channel. This is known as the "off" state. By adjusting the voltage applied to the gate, the switching action of the SI2303-TP can be controlled.
The SI2303-TP has been used in several applications including power management, lighting, motor control, computing, and automotive applications. It is capable of handling high power loads and has proven to be a reliable and powerful solution for modern applications. It is also well-suited for switching and audio applications as it provides low-voltage switching capability, low-on-resistance, and high-speed performance.
In conclusion, the SI2303-TP is a high-performance n-channel enhancement mode MOSFET transistor manufactured by Vishay Siliconix. It features an on-resistance of only 0.026Ω, very low gate charge, and a low Miller plateau voltage, as well as an operating power level of both low (VDs 0.6V to 15V) and high (VDS 20V to 30V) power levels. Its working principle is relatively straightforward, as it is made up of three terminal connections - the gate, drain, and source - which enable its basic operation when the voltage applied to the gate is greater than the threshold voltage. This makes it ideal for high-power consumer, automotive, and industrial applications, especially those requiring high-speed switching.
The specific data is subject to PDF, and the above content is for reference
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