
Allicdata Part #: | SI2305-TPMSTR-ND |
Manufacturer Part#: |
SI2305-TP |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Micro Commercial Co |
Short Description: | P-CHANNEL MOSFET, SOT-23 PACKAGE |
More Detail: | P-Channel 8V 4.1A (Ta) 350mW (Ta) Surface Mount SO... |
DataSheet: | ![]() |
Quantity: | 3000 |
3000 +: | $ 0.05506 |
Vgs(th) (Max) @ Id: | 900mV @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 350mW (Ta) |
FET Feature: | -- |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 90 mOhm @ 2A, 1.8V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 4.1A (Ta) |
Drain to Source Voltage (Vdss): | 8V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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A high-power field-effect transistor (FET) is an essential device in any modern electronic circuit. The Source-in 2305-TP is one of the most advanced, versatile, and efficient FETs available. This article will explore the application fields and working principle of the Source-in 2305-TP.
Application Fields
The Source-in 2305-TP is most commonly used in three major application fields. First, it is used in amplifier classes A and AB. The 2305-TP is one of the most efficient FETs available, so it is an excellent choice for high-powered amplifiers. Second, it is used in loudspeakers. The FET produces minimal distortion and low noise, so it is ideal for live or studio audio. Third, it is used in HVAC (heating and ventilation) systems. The 2305-TP produces accurate temperature control, so it is perfect for maintaining the desired climate.
Working Principle
At the heart of the Source-in 2305-TP is its field-effect transistor (FET). This type of transistor is best known for its high-power capabilities. In summary, a FET works by using an electrical field to control the flow of current. A voltage is applied across the transistor, causing an electric field to form between the source and the drain. This field then modulates the flow of current. When the field is stronger, the current is stronger, and vice versa.
The Source-in 2305-TP features a single-gate FET. This design simplifies the internal configuration, which makes the FET more compact. It also increases the efficiency of the device, as it requires less voltage to operate. Additionally, the single-gate FET improves the signal integrity, as it reduces capacitance and noise.
In summary, the Source-in 2305-TP is one of the most efficient and versatile FETs available. It is suitable for a variety of applications, from amplifiers to HVAC systems. Additionally, its single-gate design simplifies the internal architecture and reduces capacitance, resulting in improved signal integrity.
The specific data is subject to PDF, and the above content is for reference
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