SI4630DY-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI4630DY-T1-GE3TR-ND

Manufacturer Part#:

SI4630DY-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 25V 40A 8-SOIC
More Detail: N-Channel 25V 40A (Tc) 3.5W (Ta), 7.8W (Tc) Surfac...
DataSheet: SI4630DY-T1-GE3 datasheetSI4630DY-T1-GE3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6670pF @ 15V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SI4630DY-T1-GE3 is a type of transistor produced by Vishay Siliconix. It is a double gate Metal Oxide Semiconductor Field Effect Transistor (MOSFET) and is designed to be used in a wide number of applications. In this article, we\'ll take a look at the field and working principle of the SI4630DY-T1-GE3.

Field of Application

The SI4630DY-T1-GE3 is designed for use in high frequency switching applications. It has an embedded Schottky diode, which makes it suitable for high current switching, up to +50 volts. It also features a low gate threshold voltage and a low on-resistance, making it well suited for many high frequency switching applications. It is often used in power supply applications, as well as in LED lighting, audio amplifiers, and motor control applications.

Working Principle

The SI4630DY-T1-GE3 is essentially a relay switch. It is a MOSFET, which stands for Metal Oxide Semiconductor Field Effect Transistor. This essentially means that it can control the flow of electrons between two terminals by varying the amount of electrical current. It works by having two control inputs, a gate and a drain, which received different amounts of voltage. When voltage is applied to the gate, it creates an electric field, which causes electrons to flow through the device, across the drain. This essentially turns the device on, allowing current to flow.

When voltage is removed from the gate, the electric field dissipates and the electrons no longer flow. This turns the device off and prevents current from flowing through the device. This ability to control the flow of electrons makes the SI4630DY-T1-GE3 an ideal choice for many high-frequency switching applications.

Conclusion

The SI4630DY-T1-GE3 is a double gate MOSFET transistor produced by Vishay Siliconix. It is designed for use in high frequency switching applications, as well as in power supplies, LED lighting, audio amplifiers, and motor control applications. It works by varying the amount of voltage applied to its gate and drain terminals, allowing it to control the flow of electrons across its drain. This makes it an ideal choice for many high frequency switching applications.

The specific data is subject to PDF, and the above content is for reference

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