Allicdata Part #: | SI4622DY-T1-GE3TR-ND |
Manufacturer Part#: |
SI4622DY-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2N-CH 30V 8A 8-SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 8A 3.3W, 3.1W ... |
DataSheet: | SI4622DY-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Base Part Number: | SI4622 |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 3.3W, 3.1W |
Input Capacitance (Ciss) (Max) @ Vds: | 2458pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 10V |
Series: | SkyFET®, TrenchFET® |
Rds On (Max) @ Id, Vgs: | 16 mOhm @ 9.6A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 8A |
Drain to Source Voltage (Vdss): | 30V |
FET Feature: | Standard |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI4622DY-T1-GE3 is a transistor array that incorporatesmosFET transistors. It is one of the manufacturers’ silicon of choicefor medium and high frequency, small size applications. It isdesigned to operate in the following applications:
- Low power audio and video switching
- Filtering, coupling and matching
- Detecting, switching and amplifying small signals
- Switching and driving large signals in high voltage applications.
The SI4622DY-T1-GE3 consists of two N-channel depletion mode MOS transistors. The two transistors, along with the other components, form an array that is able to provide gain and low noise, while preserving fast switching speeds. The transistors are able to handle up to -55V drain-to-source voltage.
The structure of the SI4622DY-T1-GE3 is such that it can easily be integrated into electrical circuits. The array includes isolation and protection elements to protect the transistors from overvoltage, overcurrent, and overload. It also includes a series of transistors connected in parallel to provide a wide variety of options for applications. Additionally, the array includes a logic level output, allowing it to be used as part of a logic circuit.
The working principle of the SI4622DY-T1-GE3 is based on the use of the integrated depletion mode transistors. When the voltage across the source and drain terminals is negative, the two transistors form a fully-depletion region. This depletion region restricts the flow of current, and as a result, the transistors act as a switch, allowing current to flow when the voltage is low and restricting current when the voltage is high. This characteristic makes them ideal for switching, amplifier and filter applications.
The SI4622DY-T1-GE3 can be used in a variety of applications, including power management, audio, video, and radio frequency signals. It is particularly useful in low power audio and video switching applications, since the depletion mode transistors can easily be adjusted to provide a suitable on/off ratio. The array also has excellent noise performance, and can provide gain for both high and low frequencies.
The SI4622DY-T1-GE3 is an ideal choice for applications that require a high performance, low power switching device. It is available in a wide range of sizes and can easily be integrated into electrical circuits. Additionally, its integrated protection elements make it a reliable and safe device to use in applications of any size.
The specific data is subject to PDF, and the above content is for reference
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