SI4621DY-T1-E3

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2W (Ta), 3.1W (Tc)
FET Feature:	Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds:	450pF @ 10V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	13nC @ 10V
Series:	LITTLE FOOT®
Rds On (Max) @ Id, Vgs:	54 mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	6.2A (Tc)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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The SI4621DY-T1-E3 is an advanced MOSFET transistor that is designed for use in a wide variety of applications. This type of transistor is a single MOSFET meaning that it consists of a single MOSFET transistor base, gate, drain and source.The primary benefit of the SI4621DY-T1-E3 MOSFET is its low on-resistance. This makes it ideal for use as a switching device in applications requiring high current density with low power dissipations. The MOSFET also has a low-power shutdown and thermal shutdown protection which can be enabled with a simple voltage level control.One of the main application areas of the SI4621DY-T1-E3 MOSFET is in low voltage DC power supplies and motor control applications. The low on-resistance of the MOSFET makes it ideal for these types of applications where a high current density is required with low power dissipations. As such, the MOSFET can be used in a variety of DC power supplies and motor control circuits.The SI4621DY-T1-E3 MOSFET also has a wide variety of uses in circuit protection applications. The low power shutdown and thermal shutdown protection features make it ideal for protecting circuits from over-current, over-voltage, and over-temperature conditions. The MOSFET can be connected to the circuit either in a normally-closed (on) or normally-open (off) fashion depending on the desired state.The working principle of the SI4621DY-T1-E3 MOSFET can be understood by looking at the internal components of the transistor. Internally, the MOSFET consists of a N-type MOSFET source and drain, an insulated-gate and three terminals which are used to control the flow of current through the MOSFET. The source terminal acts as the input signal and will drive the insulated-gate to switch between the drain and source.When voltage is applied to the gate terminal of the MOSFET, it creates an electric field which attracts electrons to the gate terminal. The electric field then forces the electrons to move from the source to the drain and back, thereby creating a current flow. This current flow is proportional to the applied voltage and is the primary function of a MOSFET transistor.In summary, the SI4621DY-T1-E3 MOSFET is an advanced single MOSFET transistor that is designed for use in a variety of applications. It offers a low on-resistance, low power shutdown and thermal shutdown protection, making it ideal for low voltage DC power supplies and motor control applications. Additionally, the working principle of the MOSFET can be understood by looking at its internal components. thus making it an ideal choice for a variety of circuit protection and switching applications.

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