SI4622DY-T1-E3

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The SI4622DY-T1-E3 is a high-voltage, 3.3V n-channel MOSFET array capable of switching loads up to 60V. It features superior RDS(ON), ESD, and surge durability, and is available in a plastic DPAK package. The SI4622DY-T1-E3 is suited for ultra-low standby power, high speed switching, and battery-powered applications where cost must be minimized.

The SI4622DY-T1-E3 is comprised of two n-channel MOSFETs in a single, four-legged package. Each MOSFET is rated for a maximum drain-source voltage of 30V, with a low typical on-resistance of 8.5mΩ at 1.8V gate-source voltage. The device is also ESD protected at up to 2kV HBM and surge protected up to 30A. The SI4622DY-T1-E3 is capable of high-speed switching with a 3V gate threshold and a typical gate charge of 4.95nC.

The SI4622DY-T1-E3 is an ideal solution for battery powered applications where space and/or cost are critical. It’s low RDS(ON) and low gate charge allow for efficient operation and high switching speeds. It also features superior device reliability with ESD and surge protection up to 2kV HBM and 30A, respectively.

The SI4622DY-T1-E3 is well-suited for a wide range of applications, including power switch devices, motor controllers, and ultra-low power electronics devices. It is especially valuable in portable, battery-powered applications where power must be conserved. Additionally, the low RDS(ON), ESD and surge protection, and high-speed switching make the device a cost-effective solution for high-voltage, high-speed switching applications.

The SI4622DY-T1-E3’s unique feature set and application capabilities make it an ideal solution for a variety of applications. Applications include power switch devices, motor controllers, ultra-low power electronics devices, as well as any other high-voltage, high-speed switching requirements. Due to its low RDS(ON), ESD, and surge protection, the device can operate efficiently and reliably in battery-powered applications. Furthermore, the device is available in an industry standard plastic DPAK package, ensuring quick design integration and long-term availability.

The SI4622DY-T1-E3’s design is based on a high-voltage, 3.3V n-channel MOSFET array. Each MOSFET is rated for a maximum drain-source voltage of 30V, with a low typical on-resistance of 8.5mΩ at 1.8V gate-source voltage. The device also features 3V gate threshold and a typical gate charge of 4.95nC for high-speed switching. It’s low RDS(ON), ESD and surge protection, and efficient operation make the SI4622DY-T1-E3 the ideal solution for a wide range of applications including power switch devices, motor controllers, and ultra-low power electronics devices.

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