Allicdata Part #: | SI4646DY-T1-E3-ND |
Manufacturer Part#: |
SI4646DY-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 12A 8SOIC |
More Detail: | N-Channel 30V 12A (Tc) 3W (Ta), 6.25W (Tc) Surface... |
DataSheet: | SI4646DY-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3W (Ta), 6.25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1790pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
Series: | SkyFET®, TrenchFET® |
Rds On (Max) @ Id, Vgs: | 11.5 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI4646DY-T1-E3 device series is a family of N-type MOSFETs designed for applications in the Automotive and Consumer domains. They are characterized by a low position on resistance and an adjustable internal thermal regulation switch.
The total resistance on each SI4646DY-T1-E3 can be adjusted by adjust the temperature from the external environment. This temperature control makes the SI4646DY-T1-E3 cascadable and suitable for application in a wide range of noise sensitive applications. Furthermore, it has been designed with low on-resistance values, which allow for higher efficiency and higher power handling.
The working principle of the SI4646DY-T1-E3 is based on an electrically conductive channel of N-type semiconductor material, or N-channel MOSFET. N-Channel MOSFETs are composed of a series of three terminals or ‘gates’, these being the drain, source and gate. The gate is balanced to the source, allowing current to flow through when a voltage is applied.
The SI4646DY-T1-E3 has a logic level on its gate, which translates to the drain and source currents based on voltage applied by the user. This allows for a maximum current of up to 30A, making it suitable for a wide range of automotive and consumer applications. Furthermore, it is also designed such that it can support large voltage drops over time, meaning it can absorb large voltage spikes during sound operation.
Stability is also ensured with the TI4646DY-T1-E3 thanks to its internal temperature regulation switch. This switch is able to adjust the resistance as the outside environment temperature changes, ensuring that its total resistance remains constant despite changing temperature ranges. Furthermore, the SI4646DY-T1-E3 is also designed with ESD protection up to 8kV making it durable against voltage drops and the sudden changes of current.
In conclusion, the SI4646DY-T1-E3 device series from ST Microelectronics is designed for automotive and consumer applications. It is characterized by a low on resistance and adjustable internal thermal regulation switch, allowing for cascading and efficient switching between voltages as well as stable operation against Voltage drops and ESD.
The specific data is subject to PDF, and the above content is for reference
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