SI4670DY-T1-E3 Discrete Semiconductor Products |
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Allicdata Part #: | SI4670DY-T1-E3TR-ND |
Manufacturer Part#: |
SI4670DY-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2N-CH 25V 8A 8SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 25V 8A 2.8W Surfac... |
DataSheet: | SI4670DY-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Base Part Number: | SI4670 |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 2.8W |
Input Capacitance (Ciss) (Max) @ Vds: | 680pF @ 13V |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 23 mOhm @ 7A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 8A |
Drain to Source Voltage (Vdss): | 25V |
FET Feature: | Logic Level Gate |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI4670DY-T1-E3 is a 3-Terminal, P-Channel, 2.7V Enhancement-Mode MOSFET, which is part of the E3 series developed by Vishay Intertechnology in its line of MOSFET arrays.
The SI4670DY-T1-E3 array is an integrated part that has been designed specifically for high-efficiency, low input voltage and low input current, with the current components all grouped together to create a highly efficient, versatile and economical way of driving power. Vishay claims that this array reduces board real estate and provides improved power performance for multiple power electronics applications.
In addition to providing the highest efficiency and power performance, the SI4670DY-T1-E3 array extends switching capability by integrating multiple MOSFETs in a single package. This package offers on-board protection and control circuitry, as well as an integrated charge pump.
The SI4670DY-T1-E3 array is optimized for low voltage applications such as off-line AC/DC converters, and is designed to be used in mobile phones, tablets and other devices that require low input voltages and currents. The integrated on-board protection circuit ensures that the array is protected against voltage, current and temperature extremes.
The SI4670DY-T1-E3 array is constructed using a unique heat dissipation technology to ensure excellent power performance. This technology utilizes a low power substrate and a low thermal feedback loop to reduce resistance and thermal dissipation. The array is also designed to reduce switching losses and optimize performance.
The SI4670DY-T1-E3 array is comprised of multiple MOSFETs, which are arranged in a 3-terminal, P-channel form. This design utilizes an active resistance network to optimize current flows. The unique design of this network also minimizes cell-to-cell variations and enables a wide operating temperature range.
Vishay’s SI4670DY-T1-E3 array improves efficiency and power performance by efficiently utilizing dissipated energy. The integrated charge pump allows for the use of advanced charge-pump circuits, which reduce the need for additional external components. This reduces the physical size of the device, which enables higher power density and decreases power supply design costs.
The SI4670DY-T1-E3 array is widely used in many electronic and power electronic applications due to its high efficiency, excellent heat dissipation, wide temperature range, low input voltage, and integrated charge pump. This part is well suited for off-line DC/DC converters, lighting applications, and battery-powered portable devices.
The specific data is subject to PDF, and the above content is for reference
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