SIHP28N60EF-GE3

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The SIHP28N60EF-GE3 is a type of field effect transistor (FET) made by Siemens AG for use in power applications. It is part of the Cool MOS™ family of state-of-the-art power transistors and offers superior switching performance for demanding applications. The device is suitable for use in AC/DC converter topologies, specifically bridgeless totem-pole and asymmetrical SEPIC topologies.

Application Field

The SIHP28N60EF-GE3 is primarily used as a power switch in AC/DC converter topologies. It is capable of operating at a maximum voltage of 700V, current of 28A and power levels of 200W. The device also features low on-state resistance, fast switching times, integrated protection against over-temperature, overvoltage and short circuit conditions.

The device is suitable for use in a variety of power supply topologies, such as bridgeless totem-pole PFC, buck converter, LLC resonant converter, half-bridge converter, forward converter, CCM boost converter, PWM/PFM DC/DC converter, and active clamp reset PFC.

The SIHP28N60EF-GE3 can also be used in a variety of applications such as power supplies, solar inverters, motor drives, and server applications where high efficiency and reliable operation is desired.

Working Principle

The SIHP28N60EF-GE3 is a type of metal oxide semiconductor field effect transistor (MOSFET). In a MOSFET, electrical current is controlled by the voltage applied to a gate, which is connected to a metal oxide gate dielectric. The current flowing from drain to source is proportional to the gate voltage.

FETs have a higher breakdown voltage and voltage drift over time than bipolar transistors, allowing for higher currents and voltages to be handled efficiently. They also have a much lower on-state resistance than bipolar transistors and can switch quickly.

The SIHP28N60EF-GE3 is built with a special gate oxide and proprietary process technology that allows for low on-state resistance and faster switching times. The gate oxide layer and gate structure further improves efficiency and reliability. The device also includes an integrated temperature sensor to provide the necessary protection in the event of an over-temperature condition.

The device also includes a high level of integrated protection against overvoltage, short circuit, and overcurrent. The device can be used in a variety of industrial and automotive applications, and is RoHS compliant.

Conclusion

The SIHP28N60EF-GE3 is a type of field effect transistor (FET) made by Siemens AG for use in power applications. It is suitable for use in AC/DC converter topologies such as bridgeless totem-pole and asymmetrical SEPIC, as well as other applications such as power supplies, solar inverters, motor drives, and server applications. The device features low on-state resistance, fast switching times, integrated protection against over-temperature, overvoltage and short circuit conditions.

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