SIHP38N60E-GE3

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SIHP38N60E-GE3 is one of the members of the portfolio of insulated gate Bipolar Transistors (IGBTs) for creative applications in power conversion. It’s built with a planar Trench-FET technology, offers a high junction temperature, high dv/dt, as well as fast and soft switching performance. It is suitable for high frequency applications and can be used in medium to high power applications.

SIHP38N60E-GE3 belongs to a family of Field-effect transistors (FETs) that are used as switches within electronic circuits. FETs can either be a Junction FET (JFET) or a Metal Oxide Semiconductor FET (MOSFET). A MOSFET is usually used to switch a current on or off, depending on the voltage applied to its gate electrode.

SIHP38N60E-GE3 is a single MOSFET which is specifically designed for high power applications. It has a drain to source voltage of 600V and a continuous drain current capability of 38A which makes it suitable for a wide range of applications.

The working principle of SIHP38N60E-GE3 is based on the basic theory of operation of a MOSFET. When the voltage applied to the gate is zero or negative, the MOSFET acts like an open switch and no current can flow through that portion of the circuit. When the applied voltage is positive, the MOSFET becomes a closed switch and current can flow from the drain to the source.

The application of SIHP38N60E-GE3 is mainly in the medium to high power field. It can be used in power supply applications for motor control, bridge rectifiers, machine tools and drives. It is also suitable for power switching applications, such as high frequency converters, inverters, and AC/DC converters.

SIHP38N60E-GE3 is a high-quality, high-performance IGBT that is suitable for many applications. Its high voltage and fast switching capabilities make it an ideal choice for switching power in high power applications. It is also suited for high frequency applications as it can operate in a very fast switching environment.

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