SIHP8N50D-E3

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The SIHP8N50D-E3 is a general purpose depletion mode N-channel enhancement type power MOSFET that was developed primarily for high voltage applications. It offers excellent performance and features, making it an ideal solution for many power management applications. Specifically, this device is designed for applications such as high voltage DC-DC converters, power supplies, motor drivers, and various other power switching circuits.

The SIHP8N50D-E3 MOSFET is made with a silicon-based semiconductor and is one of the most common types of field-effect transistors (FETs) used in modern electronics. Unlike conventional transistors which are designed to control current by using a gate voltage to control the resistance of a substrate material, FETs are instead designed to control a current within the device itself. As such, the device can be used to regulate the amount of current flowing through it.

The SIHP8N50D-E3 MOSFET operates as a depletion mode device, meaning that it will not turn on unless a voltage is applied to the gate terminal. This feature is advantageous as it allows the device to maintain its off-state resistance when the gate voltage is disconnected. Additionally, the gate-to-source breakdown voltage of the device is relatively high, which allows it to be used in high-voltage applications.

The SIHP8N50D-E3 MOSFET is designed with an N-channel enhancement type structure, meaning that electrons must be “enhanced” when flowing through the device in order to turn it on. The device is operated by applying a positive voltage to the gate terminal, which “enhances” the electrons allowing them to pass through the device. When a sufficient amount of electrons pass through, the device will turn on. When the gate voltage is removed, the device will turn off and its off-state resistance will remain high until a voltage is again applied to the gate terminal.

The SIHP8N50D-E3 is capable of handling currents up to 8.5A and its drain-source on-resistance is typically 19 mΩ. This makes it suitable for a variety of high-current applications. Additionally, the device offers low gate charge, allowing it to switch quickly at high frequencies. This makes it an ideal choice for high-frequency switching applications such as DC-DC converters and power supplies.

In summary, the SIHP8N50D-E3 is a general purpose N-channel depletion mode power MOSFET that is designed for high-current and high-voltage applications. It is capable of handling currents up to 8.5A and its drain-source on-resistance is typically 19 mΩ. Additionally, the device offers low gate charge, which allows the device to switch quickly at high frequencies. As such, it is an ideal solution for many power management and switching applications.

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