SIHP6N40D-GE3

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Transistors - FETs, MOSFETs - Single: SIHP6N40D-GE3 application field and working principle

The SIHP6N40D-GE3 is a Power MOSFET produced by Siliconix. It provides a switching voltage of -40 V and can be used in both high- and low-voltage circuits. The maximum drain current the device can take is 3 A. Its on-resistance (RDS) is 4.66 Ω at 10 V, and the maximum drain Source voltage is 500 V. This makes it a suitable part for power supply circuits and power amplifier circuits.

The SIHP6N40D-GE3 is a field-effect transistor (FET) device, and it has an insulated gate with a gate voltage applied to control the drain-source current. When the input voltage is low, the junction between the source and the drain is off and no current will pass. As the gate voltage is increased, the width of the inversion layer at the drain junction increases, allowing current to flow through the junction.

The main application for the SIHP6N40D-GE3 is in high-voltage switching, due to its high voltage tolerance and low on-resistance. It can be used in automotive applications, power supplies and audio amplifiers. It is also used in HID headlights as it can provide high currents for short periods of time when the headlights are switched on.

The SIHP6N40D-GE3 is a very reliable MOSFET device, and it is one of the most commonly used MOSFETs in general purpose applications. Its robust design and high voltage tolerance makes it an excellent choice for most power switching applications. Furthermore, it is reasonably priced, making it an attractive option in terms of cost-performance ratio.

In conclusion, the SIHP6N40D-GE3 is an excellent choice for high-voltage switching applications and can be used in many different fields. Its reliable design and low on-resistance make it a desirable part for a variety of applications. Furthermore, its low cost makes it an attractive option for cost-performance ratio.

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