SIHP18N60E-GE3

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	179W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1640pF @ 100V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	92nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	202 mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	18A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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<p>The SIHP18N60E-GE3 is a high voltage Enhancement-mode Field-Effect Transistor (FET) that is often used for Power and Current Regulation in applications such as switch mode power supplies, gate drive circuits, motor control, dc-dc converters, or inductive voltage or current sensing. It is an N-channel Enhancement-mode device with a maximum drain source voltage of 600V (VDSS) and a drain current of 18A (ID). The SIHP18N60E-GE3 also has a low maximum transient on-state resistance of 0.0065 Ohm (Rds(on)).</p><p>A FET is an unipolar component and consists of three terminals: gate, source, and drain. In contrast to bipolar junction transistors, FETs can pass a much larger current with a much lower gate voltage and in a much more efficient way. It achieves this by having its gate terminals act like an insulated gate and thereby controlling the flow of electrons between source and drain. The current is proportional to the voltage applied across the gate and source terminals, as long as it is in the range of the threshold voltage (VGS(th)) of the component.</p><p>The enhancement-mode FET of the SIHP18N60E-GE3 has to be switched from off to on in order for it to conduct. The maximum on-state resistance for the SIHP18N60E-GE3 is 0.0065 Ohms (Rds(on)) and this resistance value has to be higher than the total load resistance in order for it to properly conduct the power. The FET is normally switched on when the gate voltage (VGS) is higher than the threshold voltage (VGS(th)). Thus, when the gate voltage is higher than the threshold voltage, the drain current flows from source to drain and the FET acts as a low resistance path from source to drain.</p><p>The SIHP18N60E-GE3 also has a low maximum gate charge (Qg) of 18nC. This gate charge determines the gate capacitance, which is directly related to the amount of current that can be drawn through the FET. The gate voltage has to be kept within a certain range in order to maintain the proper drain current. If the gate voltage is too low, the FET will produce a weak off-state current and will not properly switch the power.</p><p>The most common application of the SIHP18N60E-GE3 includes switching, power and current regulation, gate drive control and motor control applications. This FET can be used in switching applications, such as switch mode power supplies and DC-DC converters, as it can handle large high voltage and current. It can also be used in gate drive control applications, such as high speed switching circuits and inductive sensing, due to its low on-state voltage and high switching speed. The FET can also be used in motor control and current regulation applications due to its low gate charge and low maximum transient on-state resistance.</p><p>In conclusion, the SIHP18N60E-GE3is an Enhancement-mode Field-Effect Transistor that is used for power and current regulation in high voltage applications. It has an excellent on-state resistance, a low gate charge, and a high maximum drain source voltage. The SIHP18N60E-GE3 can be used for switching, power and current regulation, as well as gate drive and motor control applications.</p>

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