SIHP21N65EF-GE3

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	208W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2322pF @ 100V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	106nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	180 mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	21A (Tc)
Drain to Source Voltage (Vdss):	650V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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SIHP21N65EF-GE3 Application Field and Working Principle

The SIHP21N65EF-GE3 is a high-performance and low-cost power MOSFET available in TO-247 package. It has a high input impedance and can be used in a wide variety of applications such as in switching and power management circuits.The SIHP21N65EF-GE3 is designed with a Gate-Source Voltage (Vgs) specification of 20 V and a high voltage drain-source breakdown voltage (Vdss) of 650 V as maximum ratings. It also features a maximum power dissipation of 150 watts and a low on-resistance rating of 0.345 ohms. Additionally, this device has an incredibly fast switching time with a turn-on time of only 8.5 nanoseconds and a turn-off time of 11.5 nanoseconds. As a result, it is capable of efficiently transferring power and dissipating heat with very little delay.The SIHP21N65EF-GE3 is mainly used in applications where high-efficiency power conversion is required. It is mainly used in motor drives, power supplies, and other motor control switching applications. Furthermore, it is also frequently used for voltage or current regulation in home appliances, such as air conditioners, refrigerators, and so on. This is due to its high-voltage breakdown resistance, current handling capability and fast switching times.This power MOSFET works by utilizing the MOS (metal oxide semiconductor) technology. This technology utilizes a silicon dioxide (SiO2) insulating layer which acts as a very efficient nonconductive barrier, thus allowing the device to be able to efficiently switch power on and off without any inefficiencies.The MOSFET works by using the input voltage at the gate terminal to affect the conduction between the drain and source terminals. When a small electric field is applied to the gate terminal, it inverts the internal silicon layer to become a conducting channel. This induces a flow of current between the drain and source terminals, thus switching the device on. As the field at the gate is increased, the current between the drain and source terminals increases accordingly. Similarly, the device can be switched off by reducing the voltage at the gate terminal.The SIHP21N65EF-GE3 is a highly reliable low-cost power MOSFET available in TO-247 package. It is designed with a high input impedance and high Vdss rating, making it ideal for a wide variety of applications involving high-efficiency power switching. Furthermore, its low-on resistance and high-speed switching capability make it an ideal choice for motor drives and other motor control applications.

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