SIHP10N40D-E3

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	147W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	526pF @ 100V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	30nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	600 mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	10A (Tc)
Drain to Source Voltage (Vdss):	400V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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The SIHP10N40D-E3 power MOSFET is designed for use in automotive applications requiring improved efficiency, high switching losses reduction and increased thermal performance. It is a N-Channel, 400V, 15A, 1.09 Ω, 5.6 mΩ, Logic Level Gate Enhancement mode bilateral power MOSFET.The SIHP10N40D-E3 is similar to other N-channel power MOSFETs, but use a unique construction method. This unique construction provides improved efficiency, reduced switching losses, and improved thermal performance. The structure includes a high temperature p-doped layer that is placed under the Gate oxide layer. This additional layer improves the Source-to-Drain breakdown voltage, resulting in the increase of the overall power dissipation capability at a given voltage. The SIHP10N40D-E3 is also featured with a junction-to-ambient thermal resistance of 230°C/Watt and Zero Gate Charge.The application field of the SIHP10N40D-E3 power MOSFET can be used in many automotive related applications, such as engine management control, low emission vehicles, air conditioning inverters and high power switches.The working principle of the SIHP10N40D-E3 power MOSFET is based on the enhancement mode MOSFET which is capable of driving a load with a high switching speed and low charge in the device. When the Gate voltage is held low, the channel between the Drain and Source is pinched off and the device is turned off. When the Gate voltage is held high, the channel between the Drain and Source is opened, allowing current to flow between the two terminals and the device is turned on.The SIHP10N40D-E3 on-resistance is 1.09 Ω and it has a very low gate charge that makes it suitable for applications where a low gate charge is needed to reduce switching losses. The device has a very low thermal resistance junction to ambient of 230°C/Watt and a high peak current of 25A, enabling it to handle high frequency switching.The SIHP10N40D-E3 power MOSFET is designed to operate from -55°C to 175°C junction temperature, which makes it suitable for automotive applications where the device will operate at various temperatures. The device has a very low voltage drop and fast switching times which provides great performance at high frequencies and in high voltage applications.The SIHP10N40D-E3 power MOSFET has a high avalanche rating and can handle transient load conditions, such as those found in motor control applications. The device is also featured with a low gate-drain capacitance and a low valid operation class variation, making it suitable for applications where fast operations under low charge device are needed.In conclusion, the SIHP10N40D-E3 power MOSFET is a perfect solution for automotive applications looking for improved efficiency and enhanced switching performance. The device has very low on-resistance and very low gate charge which reduces switching losses, high Peak current capabilities and a very high temperature operation range, enabling it to be used in applications that require higher performance and higher temperature operation. Its capability to handle transient load conditions makes it suitable for motor control applications. Its low voltage drop and fast switching time makes it suitable for applications requiring higher speed operation.

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