SIHP6N40D-E3 Allicdata Electronics
Allicdata Part #:

SIHP6N40D-E3-ND

Manufacturer Part#:

SIHP6N40D-E3

Price: $ 0.56
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 400V 6A TO-220AB
More Detail: N-Channel 400V 6A (Tc) 104W (Tc) Through Hole TO-2...
DataSheet: SIHP6N40D-E3 datasheetSIHP6N40D-E3 Datasheet/PDF
Quantity: 1000
1000 +: $ 0.50273
Stock 1000Can Ship Immediately
$ 0.56
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 104W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 311pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 1 Ohm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The SIHP6N40D-E3 is an N-Channel Enhancement Mode MOSFET which is widely used in a variety of applications. It is a power transistor that is used primarily to switch electrical signals from one circuit to another. The SIHP6N40D-E3 is a 600V 6A transistor, which makes it well suited for applications such as motor control, power switching, and DC-DC conversion. The SIHP6N40D-E3 is a general-purpose power MOSFET that is designed to provide a high level of performance with a low input capacitance.

The primary benefit of using an N-Channel Enhancement Mode MOSFET is that it is able to provide a high level of control over the switching times of a circuit. This is because the N-Channel MOSFET can be used in both enhancement and depletion modes, which allows it to switch very quickly. In addition, the high input capacitance of an N-Channel MOSFET allows for greater levels of stability when switching large currents.

The working principle of the SIHP6N40D-E3 is relatively simple. The transistor is made up of two layers, the N-Channel Body and the Gate. The N-Channel body contains the source, the drain, and the channel, which is where the current flows. The Gate is the control terminal, and the voltage applied to this terminal determines the amount of current that is allowed to flow through the channel.

When the voltage applied to the Gate is positive, this pulls the electrons in the N-Channel body closer, causing them to become more easily attracted by the source and the drain. This causes a reduction in the resistance of the N-Channel body, which allows current to easily flow through it. When the voltage on the Gate is reduced, the opposite occurs, and the electrons in the N-Channel body move away from the source and the drain, which increases the resistance of the N-Channel body, preventing current flow.

The SIHP6N40D-E3 can be used in a variety of applications, including motor control and switching power supplies. In motor control applications, the SIHP6N40D-E3 can be used to switch the currents flowing through the motor, allowing for precise control over the motor speed and direction. In switching power supplies, the SIHP6N40D-E3 can be used to switch the currents flowing through the power supply, which allows for more efficient power conversion.

The SIHP6N40D-E3 is a very powerful and reliable transistor, and is capable of handling up to 6A at 600V. It is a very useful component for a variety of applications and can be used with confidence.

The specific data is subject to PDF, and the above content is for reference

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