SIHP28N65EF-GE3

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The SIHP28N65EF-GE3 is a field-effect transistor (FET) used in many application fields. This device is a single-gate MOSFET constructed with a dielectric-isolated planar process, which enables good power and high density switching performance. This device is designed to help reduce the number of LEDs used in lighting systems, help increase output power of power supplies, and help reduce switching power loss in motor systems.

This device also provides built-in 15V zener clamp protection on the gate and source pins, which increases reliability and operating insulation even during transient surges. The temperature range for this device is -55 to +150°C and the output current is rated from 2A to 28A. It also features an ESD-protected protection structure with low threshold level.

The SIHP28N65EF-GE3 is used in many application fields, such as system control, power switching, audio amplifier control, motor control, automotive power control, and home appliance control. This device works as a switch or amplifier, depending on the level of voltage applied.

When voltage is applied to the gate of the device, the current flows through the drain and source terminals, and a channel of electrons is formed. The amount of current passing through the drain-source relationship is determined by the voltage level applied to the gate terminal. This is known as an enhancement mode field-effect transistor (FET), as it requires an applied gate voltage for current to pass through.

When the applied voltage is low, the current is blocked from flowing from the source to the drain, and the FET is said to be “off.” When the voltage is high, the current flows from source to the drain, and the FET is said to be “on”, thus allowing current to pass through. This type of transistor is used for switching applications, and can also be used for amplification and for impedance matching.

The SIHP28N65EF-GE3 also has a body diode in its structure, which is useful in protecting the FET from reverse polarity. The diode turns on when back-voltage is applied, thus shorting the FET, and preventing it from becoming damaged. In applications, the inputs to this device should always be connected to either the source or the drain in order to ensure proper operation.

Overall, the SIHP28N65EF-GE3 is a single-gate FET designed for low on-resistance and large current-handling capability. It is suitable for many different application fields and can be used as a switch or amplifier, depending on the voltage applied. This device provides built-in protection against transient surges and reverse polarity, and offers a temperature range of -55 to +150°C. This device is ideal for systems requiring power and high density switching performance.

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