SIHP25N60EFL-GE3

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The SIHP25N60EFL-GE3 is an N-Channel MOSFET (a metal-oxide-semiconductor field-effect transistor). It is a key component that can be used in many different applications. The SIHP25N60EFL-GE3 boasts an on-resistance of around 25 milliohm at 10 volts, making it suitable for applications requiring low RDSon.

Application Field

The SIHP25N60EFL-GE3 is a versatile and reliable MOSFET that can be used in many different applications where low RDSon and fast switching speeds are desired. Examples of possible applications in which the SIHP25N60EFL-GE3 can be used include:

• Power conversion and regulation, such as switch-mode power-supply and DC/DC LED Lighting converters.
• Power switching and output stages for electric motors.
• DC/DC charging in automotive applications.
• Portable device chargers.
• DC/DC converters in wireless base stations.
• High-current load switches and OR-ing FETs.

Working Principle

The SIHP25N60EFL-GE3 is an N-Channel MOSFET, meaning that it acts as a switch and can be used to control the flow of current between two nodes when a certain voltage is applied to the gate. When the transistor is turned on, the electric current flows from the source to the drain and the voltage at the drain is very close to the source voltage. When the transistor is turned off, the electric current is blocked and the voltage between the source and the drain is very close to zero.

The SIHP25N60EFL-GE3 works predominantly as a low-side switch (when the gate voltage is relatively low) or a high-side switch (when the gate voltage is relatively high). In low-side switching applications, the source is connected to the ground and the drain is connected to the load circuit. In high-side switching applications, the source is connected to the power supply and the drain is connected to the load. The low RDSon of the SIHP25N60EFL-GE3 makes it more suitable for low-side switching applications, as the transistor is able to stay on for longer.

The gate-trigger voltage (VGS) of the MOSFET is an important parameter that should be taken into consideration. This is the threshold voltage at which the transistor is turned on or off. If the voltage on the gate is below the gate-trigger voltage, the transistor will be turned off. If the voltage on the gate is above the gate-trigger voltage, the transistor will be turned on. The SIHP25N60EFL-GE3 has a gate-trigger voltage of 4.5 volts. This means that for the transistor to turn on, a voltage of at least 4.5 volts needs to be applied to the gate.

The power dissipation of the SIHP25N60EFL-GE3 should also be considered. Power dissipation is the power that is dissipated by the MOSFET when it is on. This is determined by the on-resistance (RDSon) of the MOSFET and the current that is flowing through it. If the power dissipation is too high, the MOSFET could overheat and be damaged. The maximum dissipation of the SIHP25N60EFL-GE3 is around 25 watts.

Conclusion

The SIHP25N60EFL-GE3 is an N-Channel MOSFET that is suitable for low-side and high-side switching applications. Its low RDSon makes it suitable for applications where fast switching speeds are needed and its power dissipation of up to 25 watts makes it suitable for many applications. It can be used in applications such as power conversion and regulation, electric motors, portable device chargers, and more.

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