SIHP22N60AE-GE3 Allicdata Electronics
Allicdata Part #:

SIHP22N60AE-GE3-ND

Manufacturer Part#:

SIHP22N60AE-GE3

Price: $ 3.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 600V 20A TO220AB
More Detail: N-Channel 600V 20A (Tc) 179W (Tc) Through Hole TO-...
DataSheet: SIHP22N60AE-GE3 datasheetSIHP22N60AE-GE3 Datasheet/PDF
Quantity: 883
1 +: $ 2.73420
10 +: $ 2.44314
100 +: $ 2.00359
500 +: $ 1.62240
1000 +: $ 1.36829
Stock 883Can Ship Immediately
$ 3
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 179W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1451pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
Series: E
Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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SIHP22N60AE-GE3 is an insulated-gate field-effect transistor developed by Infineon Technologies. It belongs to the family of single transistors and is a very powerful power semiconductor. This transistor has a wide range of application fields. It can provide a reliable interface between high voltage circuits and low voltage circuits. It also can be used in power switching applications such as AC/DC converters, DC/DC converters, audio amplifiers, and motor controls.

The main components of this transistor includes a source (S), a drain (D), a gate (G) and an insulation layer between the gate and the source/drain region. The working principle of this device is based on the semiconductor effect, which is the ability of a conductor to form an electrical current when a voltage is applied. When a gate-source voltage (VGS) is applied to the gate, it causes an electric field to form. This electric field causes the electrons to move from the source to the drain, thereby forming a conducting channel between the two regions. This conducting channel, known as the "channel", allows current to flow from the source to the drain.

When current flows through the channel, a small amount of energy is dissipated. This dissipated energy is dissipated as heat, and it is proportional to the amount of current flowing through the channel. The power dissipation of this transistor is usually very low, making it a good choice for applications that need to perform under heavy load. Furthermore, it offers a high voltage rating, allowing it to be used in high voltage power switching applications.

The SIHP22N60AE-GE3 is also known for its fast switching speed. This makes it an ideal choice for applications requiring fast switching speeds such as audio amplifiers and motor controls. The lowgate capacitance provides this ideal performance. This transistor has a wide operating temperature range, making it suitable for use in a variety of environments. It is also highly reliable, with a guaranteed number of operational cycles.

The SIHP22N60AE-GE3 is a very versatile transistor that is suitable for use in a variety of applications including AC/DC converters, DC/DC converters, and audio amplifiers. Its wide range of application fields and reliable power dissipation make it a very popular choice for a variety of power switching applications. Furthermore, its fast switching speed and low gate capacitance make it an ideal choice for applications requiring fast switching speeds such as audio amplifiers and motor controls.

The specific data is subject to PDF, and the above content is for reference

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