
Allicdata Part #: | SIHP22N60AE-GE3-ND |
Manufacturer Part#: |
SIHP22N60AE-GE3 |
Price: | $ 3.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 600V 20A TO220AB |
More Detail: | N-Channel 600V 20A (Tc) 179W (Tc) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 883 |
1 +: | $ 2.73420 |
10 +: | $ 2.44314 |
100 +: | $ 2.00359 |
500 +: | $ 1.62240 |
1000 +: | $ 1.36829 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 179W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1451pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 96nC @ 10V |
Series: | E |
Rds On (Max) @ Id, Vgs: | 180 mOhm @ 11A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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SIHP22N60AE-GE3 is an insulated-gate field-effect transistor developed by Infineon Technologies. It belongs to the family of single transistors and is a very powerful power semiconductor. This transistor has a wide range of application fields. It can provide a reliable interface between high voltage circuits and low voltage circuits. It also can be used in power switching applications such as AC/DC converters, DC/DC converters, audio amplifiers, and motor controls.
The main components of this transistor includes a source (S), a drain (D), a gate (G) and an insulation layer between the gate and the source/drain region. The working principle of this device is based on the semiconductor effect, which is the ability of a conductor to form an electrical current when a voltage is applied. When a gate-source voltage (VGS) is applied to the gate, it causes an electric field to form. This electric field causes the electrons to move from the source to the drain, thereby forming a conducting channel between the two regions. This conducting channel, known as the "channel", allows current to flow from the source to the drain.
When current flows through the channel, a small amount of energy is dissipated. This dissipated energy is dissipated as heat, and it is proportional to the amount of current flowing through the channel. The power dissipation of this transistor is usually very low, making it a good choice for applications that need to perform under heavy load. Furthermore, it offers a high voltage rating, allowing it to be used in high voltage power switching applications.
The SIHP22N60AE-GE3 is also known for its fast switching speed. This makes it an ideal choice for applications requiring fast switching speeds such as audio amplifiers and motor controls. The lowgate capacitance provides this ideal performance. This transistor has a wide operating temperature range, making it suitable for use in a variety of environments. It is also highly reliable, with a guaranteed number of operational cycles.
The SIHP22N60AE-GE3 is a very versatile transistor that is suitable for use in a variety of applications including AC/DC converters, DC/DC converters, and audio amplifiers. Its wide range of application fields and reliable power dissipation make it a very popular choice for a variety of power switching applications. Furthermore, its fast switching speed and low gate capacitance make it an ideal choice for applications requiring fast switching speeds such as audio amplifiers and motor controls.
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SIHP30N60E-E3 | Vishay Silic... | -- | 979 | MOSFET N-CH 600V 29A TO22... |
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SIHP24N65E-GE3 | Vishay Silic... | 4.57 $ | 40 | MOSFET N-CH 650V 24A TO22... |
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SIHP14N50D-GE3 | Vishay Silic... | 1.11 $ | 1000 | MOSFET N-CH 500V 14A TO-2... |
SIHP12N50C-E3 | Vishay Silic... | -- | 629 | MOSFET N-CH 500V 12A TO-2... |
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