SIHP33N60E-GE3 Allicdata Electronics
Allicdata Part #:

SIHP33N60E-GE3-ND

Manufacturer Part#:

SIHP33N60E-GE3

Price: $ 4.46
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 600V 33A TO-220AB
More Detail: N-Channel 600V 33A (Tc) 278W (Tc) Through Hole TO-...
DataSheet: SIHP33N60E-GE3 datasheetSIHP33N60E-GE3 Datasheet/PDF
Quantity: 2526
1 +: $ 4.46040
10 +: $ 4.32659
100 +: $ 4.23738
1000 +: $ 4.14817
10000 +: $ 4.01436
Stock 2526Can Ship Immediately
$ 4.46
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 278W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3508pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 99 mOhm @ 16.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk 
Description

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Transistors are important and versatile components of electronics. One type, Field-Effect Transistors (FETs), have become a staple of every electronics engineer’s toolkit. The SIHP33N60E-GE3 is one such FET, found in applications such as Audio Amplifier, Digital Signal Processor, and Telecommunication and Data acquisition Systems. This article will provide an overview of the application fields and the working principle of this specific FET.

The SIHP33N60E-GE3 MOSFET is a fast switching and low on-state resistance NMOS transistor. It is designed for high-performance power management applications and suitable for switching applications with high efficiency due to its low on-state resistance. Its high-speed performance reduces controlling losses, resulting in higher system efficiency. It is also capable of operation up to +300V and at high frequencies, making it suitable for a variety of uses.

The SIHP33N60E-GE3 application fields span a wide range of industries and sectors. Its fast switching and low on-state resistance make it suitable for use in audio and power amplification, as well as telecommunications and data acquisition systems. It is also used in motor control, solar cell inverters, and other power management systems. It is also suitable for use in high-side and low-side switching applications, such as those found in automotive power systems.

The MOSFET works by controlling the current through the channel between the drain and the source terminals. Gate voltage controls the current through the channel; an increased voltage increases the current, while a decreased voltage decreases it. The gate control voltage is determined by the circuit in which the FET is being used. When the gate voltage reaches a certain threshold, current begins to flow. This process is known as threshold sensitivity.

MOSFETs such as the SIHP33N60E-GE3 are found in a variety of applications due to their versatility and efficiency. Their high-speed performance and low on-state resistance makes them suitable for a wide range of uses, and their gate sensitivity makes them able to switch quickly and accurately. Their application fields range from audio and power amplification, telecommunications and data acquisition, motor control, and solar cell inverters, to automotive power systems. Thus, the SIHP33N60E-GE3 is a valuable addition to any electronics engineer’s toolkit.

The specific data is subject to PDF, and the above content is for reference

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