SIHP16N50C-E3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SIHP16N50C-E3 is a MOSFET device from Infineon Technologies and it is commonly used in a variety of applications. It is a type of Field Effect Transistor (FET) that is designed for use in high power applications. The SIHP16N50C-E3 works on the principle that voltage is used to control a thin channel of semi-conductor material (the channel between the source and drain) that is created by the gate terminal. This channel is used to control the flow of current between the source and drain terminals. The MOSFET is an incredibly efficient transistor because it can easily control the flow of current without consuming large amounts of power. Due to its efficiency and power handling capabilities, the SIHP16N50C-E3 is commonly used in a variety of high power applications such as: power supplies, DC-DC converters, motor control, and high power audio amplifiers.

The SIHP16N50C-E3 is a three-terminal device consisting of a source, gate, and drain parts. The gate terminal acts as a switch to control the flow of current through the MOSFET. When a negative voltage is applied to the gate node, the MOSFET is in its ON state, allowing a large current to flow from the source to the drain through the channel. When the gate voltage is positive, the MOSFET is in its OFF state, blocking the current from flowing between the source and drain.

The main feature of the SIHP16N50C-E3 is its high current handling capability. It has a maximum drain current of 16A, which means it can handle large loads without any problems. The transistor has a maximum drain source voltage (VDS) of 50V, which makes it suitable for use in higher power applications, such as motor control in automotive and industrial applications. The device also has a maximum power dissipation (PD) of 220W and a maximum junction temperature (Tj) of 175°C, making it suitable for high power applications where dissipating large amounts of heat is important.

In addition to its high current rating, another advantage of the SIHP16N50C-E3 is its low RDS(on) (resistance) rating. The device has an RDS(on) rating of 95mΩ, which means it has a very low resistance when it is in the ON state. This low resistance rating means that the device is able to handle large loads with minimal power consumption.

The SIHP16N50C-E3 is a very versatile transistor device. It is suitable for use in a wide range of applications including motor control and power supplies, as well as for use in high power audio amplifiers and other applications where low resistance and high power capability are required. In addition, the device is relatively easy to use and can be used with any type of MOSFET driver.

The specific data is subject to PDF, and the above content is for reference