SIHP14N60E-GE3 Allicdata Electronics
Allicdata Part #:

SIHP14N60E-GE3-ND

Manufacturer Part#:

SIHP14N60E-GE3

Price: $ 1.88
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 600V 13A TO220AB
More Detail: N-Channel 600V 13A (Tc) 147W (Tc) Through Hole TO-...
DataSheet: SIHP14N60E-GE3 datasheetSIHP14N60E-GE3 Datasheet/PDF
Quantity: 990
1 +: $ 1.71360
10 +: $ 1.54791
100 +: $ 1.24381
500 +: $ 0.96739
1000 +: $ 0.80155
Stock 990Can Ship Immediately
$ 1.88
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 147W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1205pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
Series: E
Rds On (Max) @ Id, Vgs: 309 mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The SIHP14N60E-GE3 is a semiconductor device that can be used in various electronic applications. It is classified as a single-ended, N-channel Enhancement Mode Field Effect Transistor (FET). This device is specifically engineered for use in power electronic applications. By adjusting the operating current and voltage, it can be used to control the electrical power in a circuit. The device is suitable for both linear and switching applications.

The SIHP14N60E-GE3 can be used in various applications ranging from motor control, gate drives, and LCD display drivers. The advantage of this device over other FETs is that it is capable of withstanding blocking voltages up to 700 V, has a high transconductance, and requires a low gate charge. This makes it more efficient for use in applications involving high power such as motor control and power supplies.

The SIHP14N60E-GE3 works on the principle of the Field Effect. As its name suggests, it works by using an electric field to control the flow of electric current. This type of transistor works by use of a gate electrode that controls the flow of electrons. When a current is applied to the gate electrode, it creates an electric field which affects the flow of electrons through the transistor. By varying the electric field, the transistor can be used to control the flow of current in an electronic circuit.

The SIHP14N60E-GE3 also features an ESD Protection diode which prevents harmful electrostatic discharges (ESD) from damaging the device. This protection diode is integrated into the package and provides a high level of protection against ESDs. It also features a fast response time and can withstand higher blocking voltage than other FETs.

In summary, the SIHP14N60E-GE3 is a single-ended, N-channel Enhancement Mode Field Effect Transistor (FET) that is suitable for applications requiring high power and efficiency. It works on the principle of the Field Effect and is capable of withstanding blocking voltages up to 700 V. It also features an integrated ESD Protection diode which prevents ESDs from damaging the device. It has a wide range of applications such as motor control, gate drives, and LCD display drivers.

The specific data is subject to PDF, and the above content is for reference

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