
Allicdata Part #: | SIHP14N60E-GE3-ND |
Manufacturer Part#: |
SIHP14N60E-GE3 |
Price: | $ 1.88 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 600V 13A TO220AB |
More Detail: | N-Channel 600V 13A (Tc) 147W (Tc) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 990 |
1 +: | $ 1.71360 |
10 +: | $ 1.54791 |
100 +: | $ 1.24381 |
500 +: | $ 0.96739 |
1000 +: | $ 0.80155 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 147W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1205pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 64nC @ 10V |
Series: | E |
Rds On (Max) @ Id, Vgs: | 309 mOhm @ 7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 13A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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.The SIHP14N60E-GE3 is a semiconductor device that can be used in various electronic applications. It is classified as a single-ended, N-channel Enhancement Mode Field Effect Transistor (FET). This device is specifically engineered for use in power electronic applications. By adjusting the operating current and voltage, it can be used to control the electrical power in a circuit. The device is suitable for both linear and switching applications.
The SIHP14N60E-GE3 can be used in various applications ranging from motor control, gate drives, and LCD display drivers. The advantage of this device over other FETs is that it is capable of withstanding blocking voltages up to 700 V, has a high transconductance, and requires a low gate charge. This makes it more efficient for use in applications involving high power such as motor control and power supplies.
The SIHP14N60E-GE3 works on the principle of the Field Effect. As its name suggests, it works by using an electric field to control the flow of electric current. This type of transistor works by use of a gate electrode that controls the flow of electrons. When a current is applied to the gate electrode, it creates an electric field which affects the flow of electrons through the transistor. By varying the electric field, the transistor can be used to control the flow of current in an electronic circuit.
The SIHP14N60E-GE3 also features an ESD Protection diode which prevents harmful electrostatic discharges (ESD) from damaging the device. This protection diode is integrated into the package and provides a high level of protection against ESDs. It also features a fast response time and can withstand higher blocking voltage than other FETs.
In summary, the SIHP14N60E-GE3 is a single-ended, N-channel Enhancement Mode Field Effect Transistor (FET) that is suitable for applications requiring high power and efficiency. It works on the principle of the Field Effect and is capable of withstanding blocking voltages up to 700 V. It also features an integrated ESD Protection diode which prevents ESDs from damaging the device. It has a wide range of applications such as motor control, gate drives, and LCD display drivers.
The specific data is subject to PDF, and the above content is for reference
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SIHP30N60E-GE3 | Vishay Silic... | -- | 883 | MOSFET N-CH 600V 29A TO22... |
SIHP7N60E-E3 | Vishay Silic... | 0.79 $ | 1000 | MOSFET N-CH 600V 7A TO-22... |
SIHP15N60E-GE3 | Vishay Silic... | -- | 951 | MOSFET N-CH 600V 15A TO22... |
SIHP20N50E-GE3 | Vishay Silic... | 2.35 $ | 29 | MOSFET N-CH 500V 19A TO-2... |
SIHP25N40D-GE3 | Vishay Silic... | 2.45 $ | 2000 | MOSFET N-CH 400V 25A TO-2... |
SIHP33N60E-GE3 | Vishay Silic... | -- | 2526 | MOSFET N-CH 600V 33A TO-2... |
SIHP15N50E-GE3 | Vishay Silic... | 1.75 $ | 1000 | MOSFET N-CH 500V 14.5A TO... |
SIHP7N60E-GE3 | Vishay Silic... | -- | 993 | MOSFET N-CH 600V 7A TO-22... |
SIHP12N50E-GE3 | Vishay Silic... | 0.7 $ | 1000 | MOSFET N-CH 500V 10.5A TO... |
SIHP23N60E-GE3 | Vishay Silic... | 1.31 $ | 1000 | MOSFET N-CH 600V 23A TO-2... |
SIHP28N65E-GE3 | Vishay Silic... | 2.16 $ | 1000 | MOSFET N-CH 650V 29A TO22... |
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SIHP24N65EF-GE3 | Vishay Silic... | 2.37 $ | 1000 | MOSFET N-CH 650V 24A TO22... |
SIHP16N50C-E3 | Vishay Silic... | 2.37 $ | 1000 | MOSFET N-CH 500V 16A TO-2... |
SIHP22N60AE-GE3 | Vishay Silic... | 3.0 $ | 883 | MOSFET N-CH 600V 20A TO22... |
SIHP24N65E-E3 | Vishay Silic... | -- | 963 | MOSFET N-CH 650V 24A TO22... |
SIHP30N60E-E3 | Vishay Silic... | -- | 979 | MOSFET N-CH 600V 29A TO22... |
SIHP14N50D-E3 | Vishay Silic... | 1.11 $ | 1000 | MOSFET N-CH 500V 14A TO-2... |
SIHP24N65E-GE3 | Vishay Silic... | 4.57 $ | 40 | MOSFET N-CH 650V 24A TO22... |
SIHP065N60E-GE3 | Vishay Silic... | 3.12 $ | 1000 | MOSFET N-CH 600V 40A TO22... |
SIHP10N40D-GE3 | Vishay Silic... | 0.5 $ | 1000 | MOSFET N-CH 400V 10A TO-2... |
SIHP8N50D-GE3 | Vishay Silic... | -- | 832 | MOSFET N-CH 500V 8.7A TO2... |
SIHP15N60E-E3 | Vishay Silic... | 2.37 $ | 57 | MOSFET N-CH 600V 15A TO22... |
SIHP14N50D-GE3 | Vishay Silic... | 1.11 $ | 1000 | MOSFET N-CH 500V 14A TO-2... |
SIHP12N50C-E3 | Vishay Silic... | -- | 629 | MOSFET N-CH 500V 12A TO-2... |
SIHP17N80E-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 800V 15A TO22... |
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SIHP5N50D-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 500V 5.3A TO2... |
SIHP33N60EF-GE3 | Vishay Silic... | 5.08 $ | 1000 | MOSFET N-CH 600V 33A TO-2... |
SIHP4N80E-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CHAN 800V TO-220... |
SIHP8N50D-E3 | Vishay Silic... | -- | 2 | MOSFET N-CH 500V 8.7A TO2... |
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