SIHP15N50E-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SIHP15N50E-GE3 is a type of single insulated gate field effect transistor (IGFET) that is specifically optimized for use in power applications. It is a high voltage and power device, making it suitable for a broad range of applications, including motor control, switchmode power supplies, DC-to-DC converters and high voltage AC power switching.

The main features of the SIHP15N50E-GE3 are its high voltage rating and its low on-resistance. The device has a maximum drain-source voltage of 15V and a low RDS(ON) of 0.15Ω, making it an ideal choice for power applications where efficiency is important. It also has an integrated Miller-Polygon structure for enhanced performance and reliability in high-voltage applications.

The SIHP15N50E-GE3 is a type of insulated gate bipolar transistor (IGBT) that is designed for use in high power applications. It is constructed from a three-terminal insulated-gate field-effect transistor, a two-terminal N-channel MOSFET, and a two-terminal P-channel MOSFET, all connected in a single package. This combination of components makes the IGFET ideal for applications that require high levels of power efficiency, such as motor drivers and other power converters.

The working principle of the SIHP15N50E-GE3 is based on the interaction between the N-channel and P-channel devices. The N-channel device is used to turn on the device, and the P-channel device is used to turn off the device. This combination of devices creates an insulated gate on which an electric field can be applied to control the conduction of current through the transistor. When a gate voltage is applied, a conducting channel is established between the two terminals and current flows.

The integrated Miller-Polygon structure of the SIHP15N50E-GE3 provides robustness and improved switching performance in high-voltage applications. This structure is made up of three insulated gate resistors arranged in a triangle, which is connected to the gate of the MOSFET. This structure reduces the Miller current during the switching process and improves the EMI (electromagnetic interference) performance.

The SIHP15N50E-GE3 is an ideal choice for a wide range of power applications that require both high voltage and power capabilities. It has a low on-resistance, high voltage rating and high power efficiency making it a valuable asset for any design. The integrated Miller-Polygon structure of the device allows for better performance and reliability in high voltage applications for a more reliable and efficient power design.

The specific data is subject to PDF, and the above content is for reference