SIHP30N60E-GE3

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The SIHP30N60E-GE3 is a field-effect transistor (FET) with a low on-resistance and a very low on-state drain-source voltage drop when compared to other FETs.

This FET is part of the SIHP30N60E-GE3 series from Infineon Semiconductors, a leader in the field of FET transistors. It is a single N-channel FET, meaning that a single n-type semiconductor region sits between its drain and source terminals. This FET is capable of operating at frequencies up to 100 MHz, and it has a maximum drain-source voltage rating of 600V.

In terms of its application field, this FET is primarily used in various types of commercial and consumer appliances, in electronics, and in industrial equipment. It is most often found in switching circuits, including the power supplies used in PCs, the power supply of LED TVs and solar energy inverters.

The working principle of the SIHP30N60E-GE3 FET is based on the control of current flow with a closely related gate voltage. By applying or removing voltage to the FET\'s gate, the current flow between its drain and source can be controlled. This allows it to be used in circuits as a switch, allowing current to flow from the drain to the source when the gate voltage is applied, and blocking current flow when no voltage is applied.

The SIHP30N60E-GE3 FET also has a low switching time, meaning that it can be used in applications that require fast response times. This, combined with its low gate capacitance, makes it ideal for high-speed switching applications.

Overall, the SIHP30N60E-GE3 FET is a reliable and efficient transistor that can be used in numerous types of applications. It is particularly useful for high-speed switching applications, where it can provide reliable switching results with minimal power loss.

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