
Allicdata Part #: | SIHP35N60E-GE3-ND |
Manufacturer Part#: |
SIHP35N60E-GE3 |
Price: | $ 4.86 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 600V 32A TO220AB |
More Detail: | N-Channel 600V 32A (Tc) 250W (Tc) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 4.41630 |
10 +: | $ 3.94128 |
100 +: | $ 3.23184 |
500 +: | $ 2.61701 |
1000 +: | $ 2.20711 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 250W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2760pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 132nC @ 10V |
Series: | E |
Rds On (Max) @ Id, Vgs: | 94 mOhm @ 17A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 32A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The SIHP35N60E-GE3 is a high-performance, N-channel MOSFET designed for use in power management, motor control, and switching power topologies in a wide variety of applications. It can be used in switch mode power supplies (SMPS) as an efficient low-side switch. It is also suitable for use as a synchronous rectifier in flash lighting applications, such as studio lighting, LED drivers, and automotive headlights.
This MOSFET is designed to provide a low on resistance and a high-temperature rating of 175°C, making it suitable for use in high-temperature environments. The SIHP35N60E-GE3 features a high current handling capability of 35A and a maximum drain-source voltage of 600V. It has a relatively low gate-source threshold voltage of 0.9V and a very high power dissipation of 802W, making it a very efficient switch.
The working principle of the SIHP35N60E-GE3 is based on the two-dimensional electron gas present at the interface between the metal gate and the silicon substrate. This phenomenon is used to control the current from the drain to the source by applying a voltage to the gate. When a low voltage is applied to the gate, electrons are prevented from passing through the channel and the drain-source current is zero. When a high voltage is applied to the gate, electrons are allowed to travel through the channel and the drain-source current increases.
The SIHP35N60E-GE3 is well-suited for a variety of applications. It is particularly useful in power supply applications, such as switch-mode power supplies, DC-DC converters, and uninterruptible power supplies. It can be used as a low-side switch in half-bridge, full-bridge, and voltage multipliers, as well as in applications requiring a high power handling capability, such as welding and induction heating. It is also suitable for use in automotive applications, such as LED headlights and adaptive cruise control systems.
The SIHP35N60E-GE3 is a highly reliable, high-performance MOSFET which can be used for a range of power management and switching applications. It is suitable for use in high-temperature environments, and offers a high current handling capability and a low gate-source threshold voltage. It is an efficient switch, with a very high power dissipation, making it well-suited for a variety of applications, including power supplies, motor control, and automotive applications.
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SIHP30N60E-GE3 | Vishay Silic... | -- | 883 | MOSFET N-CH 600V 29A TO22... |
SIHP7N60E-E3 | Vishay Silic... | 0.79 $ | 1000 | MOSFET N-CH 600V 7A TO-22... |
SIHP15N60E-GE3 | Vishay Silic... | -- | 951 | MOSFET N-CH 600V 15A TO22... |
SIHP20N50E-GE3 | Vishay Silic... | 2.35 $ | 29 | MOSFET N-CH 500V 19A TO-2... |
SIHP25N40D-GE3 | Vishay Silic... | 2.45 $ | 2000 | MOSFET N-CH 400V 25A TO-2... |
SIHP33N60E-GE3 | Vishay Silic... | -- | 2526 | MOSFET N-CH 600V 33A TO-2... |
SIHP15N50E-GE3 | Vishay Silic... | 1.75 $ | 1000 | MOSFET N-CH 500V 14.5A TO... |
SIHP7N60E-GE3 | Vishay Silic... | -- | 993 | MOSFET N-CH 600V 7A TO-22... |
SIHP12N50E-GE3 | Vishay Silic... | 0.7 $ | 1000 | MOSFET N-CH 500V 10.5A TO... |
SIHP23N60E-GE3 | Vishay Silic... | 1.31 $ | 1000 | MOSFET N-CH 600V 23A TO-2... |
SIHP28N65E-GE3 | Vishay Silic... | 2.16 $ | 1000 | MOSFET N-CH 650V 29A TO22... |
SIHP12N65E-GE3 | Vishay Silic... | -- | 18 | MOSFET N-CH 650V 12A TO-2... |
SIHP24N65EF-GE3 | Vishay Silic... | 2.37 $ | 1000 | MOSFET N-CH 650V 24A TO22... |
SIHP16N50C-E3 | Vishay Silic... | 2.37 $ | 1000 | MOSFET N-CH 500V 16A TO-2... |
SIHP22N60AE-GE3 | Vishay Silic... | 3.0 $ | 883 | MOSFET N-CH 600V 20A TO22... |
SIHP24N65E-E3 | Vishay Silic... | -- | 963 | MOSFET N-CH 650V 24A TO22... |
SIHP30N60E-E3 | Vishay Silic... | -- | 979 | MOSFET N-CH 600V 29A TO22... |
SIHP14N50D-E3 | Vishay Silic... | 1.11 $ | 1000 | MOSFET N-CH 500V 14A TO-2... |
SIHP24N65E-GE3 | Vishay Silic... | 4.57 $ | 40 | MOSFET N-CH 650V 24A TO22... |
SIHP065N60E-GE3 | Vishay Silic... | 3.12 $ | 1000 | MOSFET N-CH 600V 40A TO22... |
SIHP10N40D-GE3 | Vishay Silic... | 0.5 $ | 1000 | MOSFET N-CH 400V 10A TO-2... |
SIHP8N50D-GE3 | Vishay Silic... | -- | 832 | MOSFET N-CH 500V 8.7A TO2... |
SIHP15N60E-E3 | Vishay Silic... | 2.37 $ | 57 | MOSFET N-CH 600V 15A TO22... |
SIHP14N50D-GE3 | Vishay Silic... | 1.11 $ | 1000 | MOSFET N-CH 500V 14A TO-2... |
SIHP12N50C-E3 | Vishay Silic... | -- | 629 | MOSFET N-CH 500V 12A TO-2... |
SIHP17N80E-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 800V 15A TO22... |
SIHP11N80E-GE3 | Vishay Silic... | 2.84 $ | 27 | MOSFET N-CH 800V 12A TO22... |
SIHP5N50D-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 500V 5.3A TO2... |
SIHP33N60EF-GE3 | Vishay Silic... | 5.08 $ | 1000 | MOSFET N-CH 600V 33A TO-2... |
SIHP4N80E-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CHAN 800V TO-220... |
SIHP8N50D-E3 | Vishay Silic... | -- | 2 | MOSFET N-CH 500V 8.7A TO2... |
SIHP14N60E-GE3 | Vishay Silic... | 1.88 $ | 990 | MOSFET N-CH 600V 13A TO22... |
SIHP35N60E-GE3 | Vishay Silic... | 4.86 $ | 1000 | MOSFET N-CH 600V 32A TO22... |
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