SIHP35N60E-GE3 Allicdata Electronics
Allicdata Part #:

SIHP35N60E-GE3-ND

Manufacturer Part#:

SIHP35N60E-GE3

Price: $ 4.86
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 600V 32A TO220AB
More Detail: N-Channel 600V 32A (Tc) 250W (Tc) Through Hole TO-...
DataSheet: SIHP35N60E-GE3 datasheetSIHP35N60E-GE3 Datasheet/PDF
Quantity: 1000
1 +: $ 4.41630
10 +: $ 3.94128
100 +: $ 3.23184
500 +: $ 2.61701
1000 +: $ 2.20711
Stock 1000Can Ship Immediately
$ 4.86
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 250W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2760pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 132nC @ 10V
Series: E
Rds On (Max) @ Id, Vgs: 94 mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The SIHP35N60E-GE3 is a high-performance, N-channel MOSFET designed for use in power management, motor control, and switching power topologies in a wide variety of applications. It can be used in switch mode power supplies (SMPS) as an efficient low-side switch. It is also suitable for use as a synchronous rectifier in flash lighting applications, such as studio lighting, LED drivers, and automotive headlights.

This MOSFET is designed to provide a low on resistance and a high-temperature rating of 175°C, making it suitable for use in high-temperature environments. The SIHP35N60E-GE3 features a high current handling capability of 35A and a maximum drain-source voltage of 600V. It has a relatively low gate-source threshold voltage of 0.9V and a very high power dissipation of 802W, making it a very efficient switch.

The working principle of the SIHP35N60E-GE3 is based on the two-dimensional electron gas present at the interface between the metal gate and the silicon substrate. This phenomenon is used to control the current from the drain to the source by applying a voltage to the gate. When a low voltage is applied to the gate, electrons are prevented from passing through the channel and the drain-source current is zero. When a high voltage is applied to the gate, electrons are allowed to travel through the channel and the drain-source current increases.

The SIHP35N60E-GE3 is well-suited for a variety of applications. It is particularly useful in power supply applications, such as switch-mode power supplies, DC-DC converters, and uninterruptible power supplies. It can be used as a low-side switch in half-bridge, full-bridge, and voltage multipliers, as well as in applications requiring a high power handling capability, such as welding and induction heating. It is also suitable for use in automotive applications, such as LED headlights and adaptive cruise control systems.

The SIHP35N60E-GE3 is a highly reliable, high-performance MOSFET which can be used for a range of power management and switching applications. It is suitable for use in high-temperature environments, and offers a high current handling capability and a low gate-source threshold voltage. It is an efficient switch, with a very high power dissipation, making it well-suited for a variety of applications, including power supplies, motor control, and automotive applications.

The specific data is subject to PDF, and the above content is for reference

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