| Allicdata Part #: | SIHP25N40D-GE3-ND |
| Manufacturer Part#: |
SIHP25N40D-GE3 |
| Price: | $ 2.45 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 400V 25A TO-220AB |
| More Detail: | N-Channel 400V 25A (Tc) 278W (Tc) Through Hole TO-... |
| DataSheet: |  SIHP25N40D-GE3 Datasheet/PDF |
| Quantity: | 2000 |
| 1 +: | $ 2.23020 |
| 10 +: | $ 1.99269 |
| 100 +: | $ 1.63378 |
| 500 +: | $ 1.32294 |
| 1000 +: | $ 1.11573 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 278W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1707pF @ 100V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 88nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 170 mOhm @ 13A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 25A (Tc) |
| Drain to Source Voltage (Vdss): | 400V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The SIHP25N40D-GE3 is a doping-enhanced depletion-mode power MOSFET. It is part of the family of single-die, integrated, high-voltage MOSFETs (HVFETs) from Siliconix. This device is suitable for high voltage and low on-resistance applications. The device is ideal for motor control, power supply, and power switch circuits.
The SIHP25N40D-GE3 belongs to the family of HVFETs and is a voltage-controlled device. It is a single device that consists of an n-channel MOSFET and a doping-enhanced depletion region. This device is fabricated using a special process technology that combines the features of a traditional depletion-mode power MOSFET with a high voltage withstand capability. The combination of these two features in one device helps to reduce the number of components and simplify the design of high voltage circuits. The device is also optically isolated which helps reduce the number of electrical connections.
The device integrates a floating source resistor for improved thermal performance, and has integrated gate protection diodes to protect against potentially damaging input signals. The device also has a built-in high-side gate drive circuitry, which simplifies the design of high-side MOSFET circuits. The device also features a high rated on-resistance strength, which makes it suitable for applications that require low power conversion efficiency.
The device uses a standard geometrical layout that incorporates a single emitter and a pair of opposite-polarity gates. Thanks to its advanced process technology, this device is also capable of achieving high current density. As a result, it is ideal for applications that require high current switching, such as motor controllers, power supplies, and power switches.
In summary, the SIHP25N40D-GE3 is a doping-enhanced depletion-mode power MOSFET capable of operating at high voltage and low on-resistance. The device integrates floating source resistor, gate protection diodes, and high-side gate drive circuitry for simplified design. It also has a high-current density rating and is ideal for motor control, power supply, and power switch circuits.
The specific data is subject to PDF, and the above content is for reference
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