SIHP15N60E-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SIHP15N60E-GE3 is an n-channel enhancement mode field effect transistor (FET). The device is designed and optimized to deliver superior on-state performance and tight channel control in different switching situations while maintaining superior switching characteristics and superior protection against overvoltage. This device is used in different applications, such as low-power systems, power management, and power switching devices. It is well suited for regulator, switch-mode power supplies, and other control circuitry applications.

The SIHP15N60E-GE3 is a metal oxide semiconductor FET (MOSFET) that utilizes doping of the substrate material to create two or more separate regions. It consists of four layers, the source, gate, drain, and substrate. These individual layers are sensitive to electrical fields and work together to create a conducting channel through which current can flow from the source to the drain. The gate is responsible for controlling the current passing through the device by exerting an electric field on the channel that either increases or decreases the current passing through the device.

The SIHP15N60E-GE3 has a high transconductance (Gm) and a low gate charge (Qg). These features help to maximize the efficiency of the device and reduce switching losses. It is also designed to provide superior on-state resistance (RDSON) and drive current rating (ID(max)). This helps to further reduce power losses and improve circuit performance. In addition, it has a built-in Thermal Sensor clip that enhances performance in high temperature and harsh environments.

The SIHP15N60E-GE3 is capable of operating over an extended temperature range and has an operating voltage range of 4.0V to 15.0V. This device can handle up to 150A of continuous current and offers good reliability and durability. It is an excellent choice for applications which require the highest possible power handling capacity and power supply flexibility.

The SIHP15N60E-GE3 can be used in a variety of applications in fields such as power and energy, automotive, consumer electronics, industrial and computing, as well as mobile application. It is well suited for power management, power switching, and low power systems, as well as for voltage regulator, switch-mode power supplies, and other control circuitry applications.

In conclusion, the SIHP15N60E-GE3 is an excellent n-channel enhancement mode FET that has been designed to provide superior performance and tight channel control in different switching situations while also offering superior switching characteristics and superior protection against overvoltage. This device can be used in various applications, such as low-power systems, power management, and power switching devices. It has a high transconductance (Gm) and a low gate charge (Qg) and can handle up to 150A of continuous current. It is a good choice for those looking for a reliable and durable FET with high power handling capacity and power supply flexibility.

The specific data is subject to PDF, and the above content is for reference