SIHP5N50D-E3

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The SIHP5N50D-E3 is a silicon insulated-gate, power field-effect transistor (FET). It is a N-Channel MOSFET mainly used in the switching and power-conversion applications. It can operate with either high speed switches or high frequency power amplifiers.

The SIHP5N50D-E3 has several applications. They include, but are not limited to, DC/ DC converters and clamped/unclamped high-voltage applications in power management, power conversion, and LCD backlight applications. It is also used for automotive voltage regulator modules (VRMs) in notebook computers, electric vehicles, and other applications. This FET can also be used in high-power audio systems, and other high-frequency switched-mode power supplies.

The SIHP5N50D-E3 is an advanced N-channel power MOSFET with excellent characteristics for high-speed switching and high-frequency power amplifiers. It is a unique insulated-gate device that operates as a voltage-controlled current source. It consists of two separate devices, a P-channel and an N-channel MOSFET. The P-channel device has a high breakdown voltage, and the N-channel device has a low on-resistance (RDS-on).

The working principle of the SIHP5N50D-E3 is as follows. When a voltage is applied to the gate, an electric field is created between the gate and the source region, known as the \'punch-through\' voltage. This electric field is used to control the current passing between the source and the drain regions of the FET. As the voltage increases, the current increases, allowing more drain current to flow and amplifying the input voltage.

The SIHP5N50D-E3 features excellent RDS-on performance and high-frequency operation in a wide variety of applications. It offers robustness, easy handling, and low voltage losses thanks to its low gate charge and low gate-source capacitance. It also features a low temperature coefficient and temperature-independent switching characteristics. Additionally, it is RoHS compliant, meaning it poses no health concerns when used in places where lead pollution is a problem.

In conclusion, the SIHP5N50D-E3 is a versatile and reliable sealed-gate FET designed for a wide variety of applications. Its excellent characteristics allow it to be used in high-speed switches and high-frequency power amplifiers. Its low ON-resistance enables high efficiency, and its low voltage losses enable robustness and reliability. With its RoHS compliance, it is a safe and reliable choice for applications in places where lead pollution is a concern.

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