SIHP12N60E-GE3

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The SIHP12N60E-GE3 belongs to a special class of electronic components called a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). Its application field is versatile and its working principle is fairly simple. This allows it to be used in a variety of applications, ranging from operating small mechanical motors to sophisticated power amplifier systems.

MOSFETs are basically transistors that control the flow of current between two terminals using an electric field. This class of transistors are chosen over others because they can handle higher current with minimal heating, making them ideal for industrial applications as well as power-conserving devices, such as computer keyboards, audio systems, and other digital appliances. MOSFETs are also known for their fast switching speed and overall efficiency, which is why they are used in high-speed applications, such as microprocessors and signal processors.

The SIHP12N60E-GE3 is specifically designed for power production applications, such as amplifiers and power supplies. Its size is small enough that it can be used in tight spaces. The dual-gate MOSFET is three-terminal, meaning it increases its on resistance RF breakdown voltage. The SIHP12N60E-GE3 is primarily used to amplify linear circuits, because its high-current resistance is ideal for linear circuits with multiple power supply stages.

The working principle of the SIHP12N60E-GE3 is fairly easy to understand. Its two gates control the flow of current through its drain and source terminals. The gate voltage is what controls the current flow. When the gate voltage is low, it will block or turn off the current flow. When the gate voltage is high, it will allow the current to flow freely, which is useful in power production applications.

The SIHP12N60E-GE3 is a single MOSFET and has a maximum drain current of 12A. Its maximum drain-source voltage is 60V and its on-resistance is typically around 0.34 ohms. This part of the device can also gate a maximum junction temperature of 175 degrees Celsius and its packaging type is a TO-220AB.

Overall, the SIHP12N60E-GE3 is an excellent choice for applications requiring low power consumption but high current flow. Its efficient design and fast switching speed offer an economical way to produce reliable and powerful power outputs. As an added benefit, the SIHP12N60E-GE3 is compatible with multiple power supply stages, making it a great choice for signal processors and microprocessors.

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