
Allicdata Part #: | SIHP30N60E-E3-ND |
Manufacturer Part#: |
SIHP30N60E-E3 |
Price: | $ 4.36 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 600V 29A TO220AB |
More Detail: | N-Channel 600V 29A (Tc) 250W (Tc) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 979 |
1 +: | $ 4.35960 |
10 +: | $ 4.22881 |
100 +: | $ 4.14162 |
1000 +: | $ 4.05443 |
10000 +: | $ 3.92364 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 250W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2600pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 130nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 125 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 29A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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。The SIHP30N60E-E3 is a high power MOSFET device with Field Effect Transistor (FET) technology that is used in a wide range of applications. It uses N-Channel MOSFET devices (NMOS) to provide the switching characteristics necessary to control devices in a wide range of applications.
The SIHP30N60E-E3 device features an energy efficient design, being capable of handling up to 600V with very low on resistance. This makes it suitable for a range of applications where high voltage is necessary, such as switching power supplies. The device also offers low gate charge for fast switching times, making it ideal for use in motor control and lighting applications.
The MOSFET technology employed in the SIHP30N60E-E3 allows for a high input impedance which helps to reduce power consumption. The low gate charge and low drain to source leakage current makes the device suitable for high power applications and provides power saving benefits. The device is also capable of handling high temperatures, up to 175°C, making it suitable for use in harsh environments.
The SIHP30N60E-E3 device works by allowing current to flow between two terminals when an electric field is applied. The electric field is generated by applying voltage to the gate of the device which controls the flow of electrons between the source and drain. When the voltage is increased, more current is allowed to flow through the device and this is the basic principle behind the operation of a MOSFET device.
The SIHP30N60E-E3 device is commonly used in a wide range of applications such as motor control, switched mode power supplies, and lighting applications. The device is also suitable for use in automotive applications as it is capable of handling high temperatures, up to 175°C, making it ideal for harsh environments. The device is also particularly useful in DC to DC converters due to its robust design and excellent switching characteristics.
Overall, the SIHP30N60E-E3 is a high power MOSFET device that enables efficient control of electrical devices in a wide range of applications. It is ideal for applications where high voltage, low gate charge and high temperature performance is necessary. It also offers excellent switching characteristics, making it suitable for use in a range of applications, from motor control to switched mode power supplies.
The specific data is subject to PDF, and the above content is for reference
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SIHP30N60E-GE3 | Vishay Silic... | -- | 883 | MOSFET N-CH 600V 29A TO22... |
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SIHP15N50E-GE3 | Vishay Silic... | 1.75 $ | 1000 | MOSFET N-CH 500V 14.5A TO... |
SIHP7N60E-GE3 | Vishay Silic... | -- | 993 | MOSFET N-CH 600V 7A TO-22... |
SIHP12N50E-GE3 | Vishay Silic... | 0.7 $ | 1000 | MOSFET N-CH 500V 10.5A TO... |
SIHP23N60E-GE3 | Vishay Silic... | 1.31 $ | 1000 | MOSFET N-CH 600V 23A TO-2... |
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SIHP22N60AE-GE3 | Vishay Silic... | 3.0 $ | 883 | MOSFET N-CH 600V 20A TO22... |
SIHP24N65E-E3 | Vishay Silic... | -- | 963 | MOSFET N-CH 650V 24A TO22... |
SIHP30N60E-E3 | Vishay Silic... | -- | 979 | MOSFET N-CH 600V 29A TO22... |
SIHP14N50D-E3 | Vishay Silic... | 1.11 $ | 1000 | MOSFET N-CH 500V 14A TO-2... |
SIHP24N65E-GE3 | Vishay Silic... | 4.57 $ | 40 | MOSFET N-CH 650V 24A TO22... |
SIHP065N60E-GE3 | Vishay Silic... | 3.12 $ | 1000 | MOSFET N-CH 600V 40A TO22... |
SIHP10N40D-GE3 | Vishay Silic... | 0.5 $ | 1000 | MOSFET N-CH 400V 10A TO-2... |
SIHP8N50D-GE3 | Vishay Silic... | -- | 832 | MOSFET N-CH 500V 8.7A TO2... |
SIHP15N60E-E3 | Vishay Silic... | 2.37 $ | 57 | MOSFET N-CH 600V 15A TO22... |
SIHP14N50D-GE3 | Vishay Silic... | 1.11 $ | 1000 | MOSFET N-CH 500V 14A TO-2... |
SIHP12N50C-E3 | Vishay Silic... | -- | 629 | MOSFET N-CH 500V 12A TO-2... |
SIHP17N80E-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 800V 15A TO22... |
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SIHP5N50D-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 500V 5.3A TO2... |
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SIHP8N50D-E3 | Vishay Silic... | -- | 2 | MOSFET N-CH 500V 8.7A TO2... |
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