SIHP30N60E-E3 Allicdata Electronics
Allicdata Part #:

SIHP30N60E-E3-ND

Manufacturer Part#:

SIHP30N60E-E3

Price: $ 4.36
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 600V 29A TO220AB
More Detail: N-Channel 600V 29A (Tc) 250W (Tc) Through Hole TO-...
DataSheet: SIHP30N60E-E3 datasheetSIHP30N60E-E3 Datasheet/PDF
Quantity: 979
1 +: $ 4.35960
10 +: $ 4.22881
100 +: $ 4.14162
1000 +: $ 4.05443
10000 +: $ 3.92364
Stock 979Can Ship Immediately
$ 4.36
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 250W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 125 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The SIHP30N60E-E3 is a high power MOSFET device with Field Effect Transistor (FET) technology that is used in a wide range of applications. It uses N-Channel MOSFET devices (NMOS) to provide the switching characteristics necessary to control devices in a wide range of applications.

The SIHP30N60E-E3 device features an energy efficient design, being capable of handling up to 600V with very low on resistance. This makes it suitable for a range of applications where high voltage is necessary, such as switching power supplies. The device also offers low gate charge for fast switching times, making it ideal for use in motor control and lighting applications.

The MOSFET technology employed in the SIHP30N60E-E3 allows for a high input impedance which helps to reduce power consumption. The low gate charge and low drain to source leakage current makes the device suitable for high power applications and provides power saving benefits. The device is also capable of handling high temperatures, up to 175°C, making it suitable for use in harsh environments.

The SIHP30N60E-E3 device works by allowing current to flow between two terminals when an electric field is applied. The electric field is generated by applying voltage to the gate of the device which controls the flow of electrons between the source and drain. When the voltage is increased, more current is allowed to flow through the device and this is the basic principle behind the operation of a MOSFET device.

The SIHP30N60E-E3 device is commonly used in a wide range of applications such as motor control, switched mode power supplies, and lighting applications. The device is also suitable for use in automotive applications as it is capable of handling high temperatures, up to 175°C, making it ideal for harsh environments. The device is also particularly useful in DC to DC converters due to its robust design and excellent switching characteristics.

Overall, the SIHP30N60E-E3 is a high power MOSFET device that enables efficient control of electrical devices in a wide range of applications. It is ideal for applications where high voltage, low gate charge and high temperature performance is necessary. It also offers excellent switching characteristics, making it suitable for use in a range of applications, from motor control to switched mode power supplies.

The specific data is subject to PDF, and the above content is for reference

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