SIHP5N50D-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SIHP5N50D-GE3 is a high-power MOSFET (metal–oxide–semiconductor field-effect transistor) primarily used as an active device for switching electrical loads. It uses n-type enhancement mode to operate, making this transistor and its variants versatile, making them ideal components for use in several different applications. In other words, the SIHP5N50D-GE3 is uniquely capable of controlling large currents and voltages while at the same time, producing a relatively low power loss so as to increase the efficiency of the circuit. The most important aspect of this MOSFET is its versatility and broad range of operating conditions that can be applied to many different areas. As an example, it can be used to operate DC and AC motor drives, to regulate the power supply in electronic systems, and as an electronic switch to ensure reliable performances.In order to understand the power of this MOSFET and how it works, we must first look at its application field and working principle. Working within the power MOSFET family, the SIHP5N50D-GE3 is built with a gate—the main controlling element of the transistor—a source and a drain that are connected to the gate through heavily doped semiconductor channels. This causes current to flow from drain to source when a voltage is applied to the gate. The drain and source voltages must be large enough to make the transistor active, which is why the input voltage applied to the gate is always set lower than the drain or source voltage. The drain-to-source voltage must be larger than the gate voltage for the transistor to be turned on.The main feature of the SIHP5N50D-GE3 is its low rDS(on). This parameter indicates the resistance value of the transistor once the gate voltagehas been applied and the drains and sources are on. This means that it can handle high currents more efficiently, compared to other transistors. Also, the maximum drain current is rated at 5A, while the voltage handling likewise is up to 300V. This makes it suitable for applications where high voltage and current require to be handled in close proximity.In addition to its high current/voltage handling capability, the SIHP5N50D-GE3 also has an impressive packaging size, measuring at only xxxxx. This makes for easy integration into multilayer printed-circuit board designs without sacrificing durability. Furthermore, the widely spaced source pins reduce the chance of parasitic inductance and capacitance to other components, improving the overall performance of the circuit.In conclusion, the SIHP5N50D-GE3 is an ideal choice for high-reliability signal and power distribution applications. With its excellent rDS(on) capabilities and high current/voltage handling, it is the perfect active switch for controlling large areas of power distribution in a circuit or system. Furthermore, its size makes for easy integration in multilayer board designs, allowing for a more stable and efficient result.

The specific data is subject to PDF, and the above content is for reference