Allicdata Part #: | STB110N55F6-ND |
Manufacturer Part#: |
STB110N55F6 |
Price: | $ 0.76 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 550V D2PAK |
More Detail: | |
DataSheet: | STB110N55F6 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.69335 |
Series: | * |
Part Status: | Active |
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The STB110N55F6 is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) belonging to ST’s Low Gate Charge (LGC) family of products. This FET is primarily used for DC/DC conversion, welding power supplies, or any AC/DC power supplies that require high efficiency and low energy loss. It is particularly suited for hard switching applications like motor controllers and converters.
The STB110N55F6 has a relatively low resistance of 11mΩ and an Rds(on) of 11.6mΩ allowing it to efficiently convert high current pulses. The device is built to work with a PWM input up to 20V, making it a good fit for applications where frequent miniaturization and high speed switching are needed. The STB110N55F6 is designed to operate at a maximum drain-source voltage (VDS) of 100V and an average drain current (ID(AV)) of 55A.
The main difference between the STB110N55F6 and the other devices in the LGC family is its higher gate threshold voltage (VGS(th)). This means that the device can handle higher source-drain voltage (VDS) swings without an increase in gate charge (Qg). The STB110N55F6 also has an improved current gain (H21) and figure-of-merit (FOM).
The STB110N55F6 has an improved figure-of-merit, which describes the device’s ability to conduct current or charge for a given voltage. The figure-of-merit (FOM) is defined by the product of its transconductance (gm) and its on-resistance (Rds(on)). A higher FOM means the device will be able to efficiently handle heavy load currents, making it suitable for high current switching applications.
The STB110N55F6 has a built-in protection against unexpected power surges. It is protected against electrostatic discharge (ESD) and it has a maximum Safe Operating Area (SOA). This device can withstand high temperature operating conditions up to 175°C.
The STB110N55F6 is a high power MOSFET with an efficient on-resistance and lower gate charge, making it suitable for switching applications that require high current and high frequency. It has good thermal and electrical stability, with a good figure-of-merit and improved current gain. It is made to withstand ESD and high temperature operating conditions and it can be used in DC/DC converters, motor controllers, and AC/DC power supplies.
The specific data is subject to PDF, and the above content is for reference
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