STB120N10F4

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The STB120N10F4 is a popular field effect transistor (FET) manufactured by STMicroelectronics. It is a high voltage N-channel MOSFET with a drain-source breakdown voltage of 100V, making it ideal for applications that require both a high voltage and high power handling capability. The STB120N10F4 is available in a number of packages, including D-Pak, SOT-279, and SOT-223, and is a widely used component in a variety of applications.

Application Field

The STB120N10F4 can be used in many fields. It is suitable for high power switching applications, such as motor controllers and power supplies. It can also be used in a variety of motor control applications, such as motor drives and servo motors. Additionally, the STB120N10F4 can be used in audio systems, active filters, switching power supply circuits, and DC to DC converters. It can also be used in automotive applications, such as automotive power management and car alarms.

Working Principle

As a field effect transistor (FET), the STB120N10F4 works on the principle of a voltage applied to the gate controlling the electrical current flow between the drain and source terminals. A voltage applied to the gate will form an electric field that modulates the surface of the semiconductor material, which in turn modulates the resistance at the area between the drain and source electrodes. This is the way the STB120N10F4 is able to control the current flow between the drain and source. The FET has a threshold voltage, which is the voltage required before the FET will start to conduct.

The STB120N10F4 is an N-channel FET, meaning that it has a negative gate threshold voltage. This means that a negative voltage must be applied to the gate in order to start conduction. The STB120N10F4 has a maximum drain source voltage of 100V, and a maximum gate source voltage of ±20V. This allows for a wide range of operating voltages and current loads.

The STB120N10F4 has an exceptionally low on-resistance, allowing for very high current loads and efficiency. Additionally, the STB120N10F4 has a very good frequency response, making it suitable for a wide range of high-frequency applications. This makes it an ideal choice for a variety of power management systems.

Conclusion

The STB120N10F4 is an excellent field effect transistor that is suitable for high voltage, high power handling applications. Its high voltage bearability, low on-resistance, and good frequency response all make it an ideal choice for automotive, audio, and power management applications. Its N-channel type and negative gate threshold voltage allow for efficient current flow and make it suitable for a wide variety of uses.

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