
Allicdata Part #: | 497-13860-2-ND |
Manufacturer Part#: |
STB13N80K5 |
Price: | $ 1.86 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 800V 12A D2PAK |
More Detail: | N-Channel 800V 12A (Tc) 190W (Tc) Surface Mount D2... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 1.86000 |
10 +: | $ 1.80420 |
100 +: | $ 1.76700 |
1000 +: | $ 1.72980 |
10000 +: | $ 1.67400 |
Vgs(th) (Max) @ Id: | 5V @ 100µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 190W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 870pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 10V |
Series: | SuperMESH5™ |
Rds On (Max) @ Id, Vgs: | 450 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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STB13N80K5 is a type of metal-oxide-semiconductor field effect transistor (MOSFET) used in many applications such as electric power conversion and motor control. This MOSFET is manufactured by STMicroelectronics, a leading semiconductor company, and is capable of operating at temperatures up to 175°C. This MOSFET is used for several different types of electric power conversions such as DC to DC, DC to AC, AC to DC and AC to AC. It also has several different applications, including motor control and power management.
The STB13N80K5 has several different features that make it suitable for use in many applications. These features include a breakdown voltage of up to 800 V, a drain-source ON resistance of 18 mOhm, a gate-source threshold voltage of 1.5 V and a gate-drain capacitance of 0.18 pF. The drain-source ON resistance is the maximum resistance that can be achieved between the drain and source when the transistor is on. The gate-source threshold voltage is a threshold voltage that must be reached in order for the transistor to turn on. The gate-drain capacitance is the maximum amount of current that can flow through the transistor when it is off.
The working principle behind the STB13N80K5 is also very simple. Basically, when a positive voltage is applied to the gate, an electric field is created which attracts electrons from the source to the drain. This increases the resistance between the drain and the source, and thus allows less current to flow. This is why this type of transistor is often used in motor control systems and other power conversion applications, where varying resistance will cause the motor to speed up or slow down.
The STB13N80K5 can be used in a variety of different applications, from electric power conversion to motor control. Its high power ratings, temperature compatibility and easy to understand working principle make it a perfect choice for many different applications. With its wide temperature operating range, low gate charge and low drain-source ON resistance, the STB13N80K5 is sure to find use in many areas.
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