STB13N80K5 Allicdata Electronics
Allicdata Part #:

497-13860-2-ND

Manufacturer Part#:

STB13N80K5

Price: $ 1.86
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 800V 12A D2PAK
More Detail: N-Channel 800V 12A (Tc) 190W (Tc) Surface Mount D2...
DataSheet: STB13N80K5 datasheetSTB13N80K5 Datasheet/PDF
Quantity: 1000
1 +: $ 1.86000
10 +: $ 1.80420
100 +: $ 1.76700
1000 +: $ 1.72980
10000 +: $ 1.67400
Stock 1000Can Ship Immediately
$ 1.86
Specifications
Vgs(th) (Max) @ Id: 5V @ 100µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 190W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Series: SuperMESH5™
Rds On (Max) @ Id, Vgs: 450 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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STB13N80K5 is a type of metal-oxide-semiconductor field effect transistor (MOSFET) used in many applications such as electric power conversion and motor control. This MOSFET is manufactured by STMicroelectronics, a leading semiconductor company, and is capable of operating at temperatures up to 175°C. This MOSFET is used for several different types of electric power conversions such as DC to DC, DC to AC, AC to DC and AC to AC. It also has several different applications, including motor control and power management.

The STB13N80K5 has several different features that make it suitable for use in many applications. These features include a breakdown voltage of up to 800 V, a drain-source ON resistance of 18 mOhm, a gate-source threshold voltage of 1.5 V and a gate-drain capacitance of 0.18 pF. The drain-source ON resistance is the maximum resistance that can be achieved between the drain and source when the transistor is on. The gate-source threshold voltage is a threshold voltage that must be reached in order for the transistor to turn on. The gate-drain capacitance is the maximum amount of current that can flow through the transistor when it is off.

The working principle behind the STB13N80K5 is also very simple. Basically, when a positive voltage is applied to the gate, an electric field is created which attracts electrons from the source to the drain. This increases the resistance between the drain and the source, and thus allows less current to flow. This is why this type of transistor is often used in motor control systems and other power conversion applications, where varying resistance will cause the motor to speed up or slow down.

The STB13N80K5 can be used in a variety of different applications, from electric power conversion to motor control. Its high power ratings, temperature compatibility and easy to understand working principle make it a perfect choice for many different applications. With its wide temperature operating range, low gate charge and low drain-source ON resistance, the STB13N80K5 is sure to find use in many areas.

The specific data is subject to PDF, and the above content is for reference

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