STB13NM60N

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STB13NM60N is a high-power MOSFET produced by STmicroelectronics. The STB13NM60N has a complementary N-channel and P-channel unit, making it a twin FET device perfect for a wide range of applications.

The N-channel unit of the STB13NM60N is specifically designed for positive gate-source voltage (Vgs), making it suitable for applications such as energy supplies, automotive electrical systems, and other high-power applications. The P-channel unit, on the other hand, is suitable for negative gate-source voltage (Vgs), making it suitable for applications such as motor drivers, battery-charging circuits, and other applications that involve reverse polarity.

This MOSFET has a maximum drain-source voltage (Vds) of 600 V, a maximum drain current of 150 A and a maximum power dissipation of 770 W. The maximum junction temperature of the device is 175°C and the thermal resistance is reduced thanks to its TO-247 7-pin package.

The main purpose of an N-channel MOSFET is to regulate a voltage input, which then allows for switching devices such as relays and motors. When an N-channel MOSFET is placed in an AC circuit, it can be used as a rectifier. A P-channel, on the other hand, is used to regulate from a negative voltage input and can be used as a sound-activated switch or to control the voltage in a power supply.

In terms of general operating principles, the STB13NM60N behaves very similarly to other MOSFETs. When an electric charge is applied to the gate terminal, it creates an electric field beneath the gate. This electric field then creates a barrier between the source and drain terminals. As the current flows through the MOSFET the voltage across the junction between the source and drain terminals is regulated, such that the output voltage is proportional to the input voltage.

The STB13NM60N is a highly versatile device, and as such, can be used in a wide range of applications. It is most commonly used in applications such as power supplies, motor drivers, automotive power systems, and other high-power applications due to its high current and voltage ratings. It can also be used in applications such as rectifiers, sound-activated switches, and other low-power applications due to its low power dissipation and thermal resistance.

Overall, the STB13NM60N is a highly versatile MOSFET designed for a wide range of applications. With its high current and voltage ratings and its low power dissipation and thermal resistance, the STB13NM60N is a highly desirable device for a variety of applications including power supplies, motor drivers, audio amplification, and more.

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