STB141NF55-1

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The STB141NF55-1 is a silicon N-channel MOSFET designed for high-voltage switching applications. It is a member of the SuperFET family and is built on a high voltage, thick gate oxide process in order to provide good switching performance and high breakdown voltage. This MOSFET gives improved immunity to latch-up due to its low input capacitance. The STB141NF55-1 is suitable for applications such as high voltage DC/DC converters, motor controllers, solenoid and relay drivers, deflection systems and high-voltage Gate drivers.

The STB141NF55-1 is a power MOSFET built with a versatile structure that lends itself to a range of drain current application needs. It is built on a high voltage and thick gate oxide process and has a low gate charge for improved switching performance. The device features a 50V-MOSFET plus an additional 60V super-trench structure that provides interaction between the drain and gate to ensure low-leakage current operations. It also offers a guaranteed reverse and avalanche diode breakdown voltage of 200V.

The STB141NF55-1 operates using an N-channel MOSFET structure that is specifically designed to promote efficient voltage control and power conversion. The N-channel MOSFET features low internal gate resistance, allowing it to exhibit fast switching with low power dissipation. Additionally, the device has an internal thermally-enhanced structure for improved current handling capability and improved thermal performance.

The STB141NF55-1 also features an integrated control circuit and protection diode, eliminating external components and saving board space. The protection diode allows for transient voltage protection under short circuit conditions. Furthermore, the device has a built-in ESD protection and is available in both 10A, 50A and 100A versions. The device can also be used in many different topologies, including classic MOSFET bridges, totem pole push-pull circuits, or half-bridge circuits.

In addition, the device is rated for 100,000 switching cycles, which is excellent for applications requiring high frequency switching. It is also capable of high-frequency operation, allowing frequencies of up to 1MHz in switching applications. The STB141NF55-1 is available in a standard TO-220AB package, making it suitable for use in a wide range of applications.

In summary, the STB141NF55-1 is a high voltage MOSFET with a low input capacitance and low gate charge. It has a built-in control circuit and protection diode, supplying efficient voltage control and power conversion. The MOSFET is suitable for applications such as High Voltage DC/DC converters, motor controllers, solenoid and relay drivers, deflection systems and high-voltage gate drivers and also offers high frequency switching capability and excellent reliability. The device is available in a standard TO-220AB package and is rated for 100,000 switching cycles.

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