STB155N3H6

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STB155N3H6 is a type of Field Effect Transistor (FET) from the STMicroelectronics family. It is a single-package board-mountable device that is especially useful for low-power applications due to its low leakage current and low gate-source voltage. It is important to note that the STB155N3H6 is not a digital transistor; unlike a digital transistor, it does not have a saturated gate-source voltage.

The STB155N3H6 is a N-channel enhancement mode FET that operates by allowing a small gate current to control a larger load current. This is accomplished by controlling the voltage applied to the gate of the FET, which in turn controls the current flowing through the FET’s load.

The STB155N3H6 features a maximum allowable drain-source voltage of 800V, a maximum drain current of 780 mA, a maximum gate-source voltage of 30V, and a maximum gate-drain voltage of 30V. It is also fully specified for use across a broad temperature range from -55 to 150C.

One of the major benefits of the STB155N3H6 is its high-end performance in low-power applications. It is relatively easy to use and is highly reliable. Additionally, it has an incredibly fast response time of less than 1 nanosecond. The STB155N3H6 has a wide range of applications, including low-voltage dc motors and light dimmers, and has been successfully used for mains control in the occasional-duty, soft-start and DC series-motor control applications.

In general, the STB155N3H6 is a single N-channel Enhancement Mode FET and operates based on the principle of controlling a larger load current with a smaller gate current. It has a maximum allowable drain-source voltage of 800V, a maximum drain current of 780 mA, a maximum gate-source voltage of 30V, and a maximum gate-drain voltage of 30V. Its fast response time makes it especially suitable for low-power applications, and it is widely used for various applications including low-voltage dc motors and light dimmers.

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