Allicdata Part #: | 497-7940-2-ND |
Manufacturer Part#: |
STB185N55F3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 55V 120A D2PAK |
More Detail: | N-Channel 55V 120A (Tc) 330W (Tc) Surface Mount D2... |
DataSheet: | STB185N55F3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 330W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6800pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 100nC @ 10V |
Series: | STripFET™ |
Rds On (Max) @ Id, Vgs: | 3.5 mOhm @ 60A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The STB185N55F3 is a Field Effect Transistor (FET). FETs are commonly used in analogue and digital circuits for a wide range of applications due to their low input and output impedance, high input and output current, and high switching speed. The STB185N55F3 is a unique type of FET, which is a metal-oxide-semiconductor field effect transistor (MOSFET). It is a type of insulated-gate field-effect transistor (IGFET) that is composed of four layers of alternating semiconductors and metal oxides.
The STB185N55F3 is a single MOSFET and is designed to operate with a source voltage of up to 600 volts and a drain-to-source current of up to 10 Amperes. It also features a low on-state resistance of approximately 0.04 Ohms, a high input and output impedance of approximately 250 Ohms, and a gate threshold voltage of approximately 4 volts. As a result, the STB185N55F3 is suitable for applications involving high voltage, high current, and high switching speed.
The working principle of the STB185N55F3 is based on the transistor effect. A transistor is a semiconductor device that consists of two or more terminals. When a small electric current is applied to the base terminal, it controls the larger current that can flow from the collector to the emitter terminals. In the case of the STB185N55F3, the base current applied to the gate terminal controls the drain-source current, allowing it to be switched on and off.
The STB185N55F3 is widely used in many applications, such as motor control, high voltage switching, power supply regulation, and audio amplifiers. In motor control, the STB185N55F3 can be used as a controllable current switch to control the speed and direction of a motor. In high voltage switching, it can be used to regulate the flow of current in a circuit by turning it on or off depending on the voltage level. In power supplies, it can be used to regulate the flow of current, allowing it to be switched at different points depending on the voltage level. It can also be used in audio amplifiers to control the gain and frequency response of the amplifier by controlling the flow of current.
The STB185N55F3 is an effective and reliable MOSFET for a wide range of applications due to its low on-state resistance, high input and output impedance, and high switching speed. It is a key component in many applications, from motor control to high voltage switching and power supply regulation. As a result, it is an important device for use in many different types of circuits.
The specific data is subject to PDF, and the above content is for reference
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