Allicdata Part #: | 497-5003-2-ND |
Manufacturer Part#: |
STB25NM60N |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 21A D2PAK |
More Detail: | N-Channel 600V 21A (Tc) 160W (Tc) Surface Mount D2... |
DataSheet: | STB25NM60N Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 160W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2400pF @ 50V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 84nC @ 10V |
Series: | MDmesh™ II |
Rds On (Max) @ Id, Vgs: | 160 mOhm @ 10.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 21A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The STB25NM60N is an N-channel power metal-oxide-semiconductor field effect transistor (MOSFET). It is a voltage-controlled MOSFET suitable for a variety of applications such as power management and motor control.
The most important characteristics of the device relate to its power handling ability. It is capable of withstanding voltages up to 600V and is able to handle current of up to 25A, making it suitable for both high-power and low-power applications. In addition, the STB25NM60N has an incredibly low on-state resistance of 350 mΩ and a low gate charge of 83 nC, ensuring efficient operation and improved system performance.
The STB25NM60N operates with a single gate, making it ideal for use in low-power and portable applications. The gate structure consists of a metal source and a drain situated between source and drain contacts, through which current flows. A conductive gate material is placed between the source and drain contacts and is used to control the current flow. In the STB25NM60N, the gate is a high-voltage MOSFET, which means that it is able to withstand both high-voltage and high-current. Because of this, the device is able to operate over a wide range of conditions.
Typically, the STB25NM60N is used in switching applications, such as in motor control, inverters, converters, etc. It is also used in lighting, battery charging and power management solutions due to its high-frequency capabilities and its ability to handle high-current and high-voltage. The STB25NM60N is also commonly used in automotive applications due to its durability and high-performance.
To summarise, the STB25NM60N is an extremely versatile and efficient voltage-controlled MOSFET. It is capable of withstanding voltages up to 600V and is able to handle current of up to 25A. It has an incredibly low on-state resistance and a low gate charge, ensuring efficient operation and improved system performance. The device is commonly used in a variety of applications such as motor control, automotive and power management solutions, due to its ability to withstand high-voltage and high-current.
The specific data is subject to PDF, and the above content is for reference
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