
Allicdata Part #: | 497-12971-2-ND |
Manufacturer Part#: |
STB2N62K3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 620V 2.2A D2PAK |
More Detail: | N-Channel 620V 2.2A (Tc) 45W (Tc) Surface Mount TO... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (D²Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 45W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 340pF @ 50V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
Series: | SuperMESH3™ |
Rds On (Max) @ Id, Vgs: | 3.6 Ohm @ 1.1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.2A (Tc) |
Drain to Source Voltage (Vdss): | 620V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The STB2N62K3 is a high-voltage, high-current N channel MOSFET with good specific on-resistance characteristics, making it ideally suited for switching and amplifying applications. Designed with the latest process and packaging technologies, the STB2N62K3 offers a robust power solution that has exceptional performance and thermal characteristics.
The STB2N62K3 is a highly versatile MOSFET that can be used in a variety of applications, with the exception of low voltage and high frequency switching. This MOSFET is capable of switching up to 650V and providing up to a 170A current. The exceptional performance characteristics of this MOSFET make it a great choice for DC/DC converters, motor drives, audio amplifiers, and other power management applications.
The proven performance of the STB2N62K3 enables engineers to design solutions with confidence. The reliable power delivery and low thermal impedance of this MOSFET ensures long life, high reliability, and high power efficiency. Additionally, the low on-state resistance (Rdson) of this MOSFET makes it the perfect solution for high power applications, such as server and storage systems and telecom infrastructure.
The working principle of the STB2N62K3 is based on the MOSFET’s ability to control current and voltage. The MOSFET is comprised of two main elements; a source and a drain. When a voltage is applied to the gate, it modifies the electric field between the source and the drain, allowing the current to flow from one terminal to the other. The power and speed of the MOSFET depend on the proper control of the electric field created between the source and the drain. The STB2N62K3 has a low internal gate capacitance, which ensures a fast response time and high efficiency.
The STB2N62K3 is also capable of carrying high levels of current while remaining relatively cool. This is due to its low on-state resistance, which reduces the power losses and helps to keep the temperature of the device low. Additionally, this MOSFET’s good thermal characteristics make it particularly suited for DC/DC converters, motor drives, and high frequency switching applications.
The STB2N62K3 is a versatile MOSFET with a wide range of application fields and excellent performance characteristics. It is well suited for high voltage, high current, and high efficiency applications. This MOSFET is capable of providing fast switching speeds, high current, and excellent thermal performance, making it an ideal choice for a variety of power management applications.
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