STB200NF04-1

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The STB200NF04-1 is a National Semiconductor power MOSFET developed for an array of applications. It is a single N-channel high voltage power MOSFET, featuring high power handling and low on-state resistance significantly farther than those of other MOSFETs. In this article, the application field and the working principle of STB200NF04-1 are discussed.

Application Field

The STB200NF04-1 is ideally suited for high voltage application as DC Motor speed controllers, DC-DC converters, and low-loaded switching power supplies. It is also suitable for use as a high side switch piloting the lower gate drive sources, such as driver ICs. The maximum gate-source voltage VGS (max) is ±20 V, the maximum drain current ID(max) is 200 A, and the maximum drain source voltage VDS(max) is 200 V. In addition, the thermal resistance is specified as 1°C/W junction-to-ambient, or 1°C/W junction-to-case.

Working Principle

The working principle of STB200NF04-1 is based on the MOSFET structure. It consists of four layers of alternating N-type and P-type silicon, with a gate electrode on top and source and drain electrodes on the bottom. The MOSFET works as an electrically controlled switch, applying a voltage to the gate will induce an electrical field, allowing current to flow between the source and drain. This field will bend the electric lines of force, making an inversion layer in the P-type material below the gate so that an N-type material forms a conduction channel between the source and the drain that is proportional to the gate voltage. This makes the drain current ID mainly proportional to the gate voltage VGS.

When this MOSFET is used for switching, its low on-state resistance RDS(ON) is especially valued. When is conducting, it has low conduction losses compared to other switches and is thus able to handle high drain current ID with small heating problems. As a result, less heat conducted away through the FET package and more heat is conducted away through the PCB.

Moreover, there are many design equations used to calculate the MOSFET turn-on and/or turn-off times; the dimensions and the voltage and current ratings of the power MOSFET; and the maximum dissipation of the power MOSFET, etc. These equations are derived from the theory of the MOSFET switch and the understanding of how it works.

Consequently, the STB200NF04-1 is an excellent choice for a number of high-performance, high-power applications and for applications it can be applied with great success. It is both reliable and cost-efficient and overall, it can save a lot of time and resources for your project.

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