STB24N65M2

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The STB24N65M2 is a medium-voltage single N-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) intended for use in a wide variety of applications. It is designed specifically to reduce on-resistance, improve noise immunity, and extend operating temperature range. This MOSFET is suitable for a wide range of applications including voltage regulation, power supplies, DC-DC converters, automotive systems, industrial/home appliances, and LED lighting.

The STB24N65M2 features an advanced N-channel MOSFET (PowerMESH™) to provide superior switching and thermal performance. The device is rated for a drain-source voltage of up to 24V and can handle drain currents up to 4A. It also features a low on-resistance of just 0.15Ω and a gate threshold voltage of -3.3V. The device also features a high power dissipation capability and improved thermal stability.

The working principle of the STB24N65M2 is based on the concept of a metal oxide semiconductor (MOS) field-effect transistor. A metal oxide semiconductor is a type of transistor that is comprised of a semiconductor material with a metal oxide layer on the surface. The metal oxide layer acts as a gate between the source and drain leads and when the gate voltage is increased, it creates an electrical field which causes electrons to transfer through the channel, allowing the current to pass through it. This process is known as “field-effect” conduction, and it allows us to control the flow of current from the source to the drain.

The STB24N65M2 is ideal for voltage regulation, power supplies, DC-DC converters, automotive systems, industrial/home appliances, and LED lighting applications. It is also suitable for current-control applications such as switchmode power supplies, motor control, and other applications that require high-speed switching. Furthermore, the MOSFET is capable of working at high temperature and can withstand up to a junction temperature of 175°C, allowing it to handle high power dissipation. As such, the STB24N65M2 is an excellent choice for applications demanding high efficiency and low on-resistance.

The STB24N65M2 provides low ON-resistance, fast switching, and improved noise immunity, making it an ideal choice for a wide range of applications. Its enhanced power handling capabilities and improved thermal stability make it an excellent choice for applications demanding high efficiency and low on-resistance. As such, the STB24N65M2 is a great addition to the world of transistors and FETs.

The specific data is subject to PDF, and the above content is for reference